Atomic Structure Evolution and Linear Regression Fitting Models for Pre-Breakdown Electric Field Strength of FCC, BCC and HCP Metal Nano-Emitters under High Electric Field from PIC-ED–MD Simulations
Xinyu Gao,Nan Li,Zifeng Song,Kai Wu,Yonghong Cheng,Bing Xiao
DOI: https://doi.org/10.1088/1361-6463/acc7b2
2023-01-01
Journal of Physics D Applied Physics
Abstract:Multi-scale and multi-physics simulations are carried out for nano-emitters consisting of FCC (Al, Cu and Au), BCC (V, Mo and W) and HCP (Ti, Zn and Zr) metals, using hybrid electrodynamics coupled with molecular dynamics-particle in cell simulations (PIC-ED–MD). We show that the tilting of the nano-emitter at low temperature and small electric field (E-field) is mainly caused either by the movement of partial dislocations at the apex of the nanotip or by the elastic local distortions of atomic registries away from their ideal lattice sites (FCC/BCC/HCP). At high E-field, the intense resistive heating due to the strong electron emission leads to the direct melting of the apex of nano-emitters. For nano-emitters consisting of low melting point metals such as Al, Zn and Au, the thermal runaway is driven by the elongation, thinning and necking of the molten region. Meanwhile, the elongation, thinning and sharpening produce the nano-protrusion at the apex of metal nano-emitters, and the detachment of atoms or atomic clusters from the nano-protrusion mainly contributes to the thermal runaway event for refractor metals such as Ti, Zr, Mo and W. The critical E-field strength of metal nano-emitters is found to be strongly correlated with structural parameters (atomic coordination number of liquid and equilibrium lattice constant), thermodynamic quantities (cohesive energy and enthalpy of evaporation) and phase transition temperatures (melting point and boiling point). These correlations enable us to establish either single-variable linear fitting models or multi-variable linear regression models to predict the critical E-field value for metal nano-emitters with good credibility.