Abstract:Thermo-enhancement is an effective way to achieve high performance field electron emitters, and enables the individually tuning on the emission current by temperature and the electron energy by voltage. The field emission current from metal or n-doped semiconductor emitter at a relatively lower temperature (i.e., < 1000 K) is less temperature sensitive due to the weak dependence of free electron density on temperature, while that from p-doped semiconductor emitter is restricted by its limited free electron density. Here, we developed full array of uniform individual p-Si/ZnO nanoemitters and demonstrated the strong thermo-enhanced field emission. The mechanism of forming uniform nanoemitters with well Si/ZnO mechanical joint in the nanotemplates was elucidated. No current saturation was observed in the thermo-enhanced field emission measurements. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm2 at 60.6 MV/m) by increasing the temperature from 323 to 623 K. The distinctive performance did not agree with the interband excitation mechanism but well-fit to the band-to-band tunneling model. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nanojunction. This work provides promising cathode for portable X-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.

How to Effectively Collect Emission Current from a Horizontal-tunneling-junction Electron Source?

Field-induced Hot-Electron Emission Model for Wide-Band-gap Semiconductor Nanostructures

A Cascade Electron Source Based on Series Horizontal Tunneling Junctions

On-Chip Electron Sources Based on Horizontal Tunneling Junction

Cascade Electron Source Based on Horizontal Tunneling Junction

Highly Efficient Horizontal Tunnel Diode Electron Sources

A High-Efficiency Electron-Emitting Diode Based on Horizontal Tunneling Junction

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

Achieving High-Current Carbon Nanotube Emitters

High Emission Current Density, Vertically Aligned Carbon Nanotube Mesh, Field Emitter Array

Computation of Charge Collection Probability for Any Collecting Junction Shape

Field Emission Behaviors under Trapezoid Voltage Pulses with a DC Bias

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

High Current Field Emission from Individual Non-Linear Resistor Ballasted Carbon Nanotube Cluster Array

Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from P-Si/zno Nanoemitters.

A New Emission Mechanism for Island-Metal-Film-Based Electron Sources

Uniform Current Supply in Gated P-Type Si-Tips for Achieving High-Performance Field Electron Emitter Array

Method of Measuring Field Emission Current under High-Voltage Pulse

Approaching the Collection Limit in Hot Electron Transistors with Ambipolar Hot Carrier Transport

Thermo-enhanced Field Electron Emission by Bandto-Ban Tunneling from P-Si/zno Nano-Emitters

Field Emission of Electrons Powered by a Triboelectric Nanogenerator