Sub-100nm Al<inf>0.7</inf>Sc<inf>0.3</inf>N Thin Films for Next Generation Bulk Acoustic Wave Resonators and Filters

Chen Liu,Minghua Li,Nan Wang,Yao Zhu
DOI: https://doi.org/10.1109/IUS54386.2022.9957221
2022-01-01
Abstract:Thin piezoelectric films with thickness around 100nm are critical for high frequency bulk acoustic resonators and filters, especially in mm-wave frequency range. In this work, 100nm and 50nm 30% Sc doped AlN (Alo.7Sco.3N) films have been deposited and the high-tone bulk acoustic wave resonators (HBAR) have been fabricated to characterize the thin piezoelectric films. The intrinsic electromechanical coupling coefficient (Kt <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) of the sub-100nm Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf> Sc <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf> N thin films has been extracted by measurements and modeling of the fabricated HBAR devices. The coupling coefficient of the deposited 100nm and 50nm Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf> Sc <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf> N thin films is 7.9% and 5.6%, respectively. These results show that the sub-100nm Sc doped AlN films are promising for the next-generation acoustic resonators and filters for mm-wave applications.
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