Enhanced electromechanical coupling coefficient and performance of AlScN/Si surface acoustic wave devices by scandium doping

W. B. Wang,Y. Fu,J. J. Chen,W. Xuan,J. K. Chen,X. Wang,P.,Mayrhofer,P. Duan,A. Bittner,U. Schmid,J. K. Luo

2016-01-01

Abstract:This paper reports characterization of scandium aluminum nitride (Al1-xScxN, x = 27%)) films and its based surface acoustic wave (SAW) devices. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0002) crystal orientation. The AlScN/Si SAW devices showed an improved electromechanical coefficients (K, ~2%) compared with those of pure AlN films (<0.5%). The performance of the two types of devices, with acoustofluidic as an example, is also investigated and compared. Much lower threshold powers for both acoustic streaming and pumping of water droplets are achieved for the AlScN/Si SAW devices, acoustic streaming velocity is doubled and the pumping velocity is tripled compared with those using the AlN/Si SAW devices. Mechanical characterization shows that Young’s modulus and hardness of the AlN film decrease significantly when Sc is doped, and is responsible for the decreased acoustic velocity, resonant frequency and increased temperature coefficient of frequency of the AlScN SAW devices. Key word: AlScN, surface acoustic wave, microfluidics. *Corresponding author emails: Richard.fu@northumbria.ac.uk; J.Luo@bolton.ac.uk.