Probing Nanoscale Carrier Dynamics in Silicon Nanowires

Jingang Li,Rundi Yang,Costas P. Grigoropoulos

2023-01-01

Abstract:We report a visible-near-infrared pump-probe nanoscopy to probe nanoscale carrier dynamics in silicon nanostructures.

What problem does this paper attempt to address?

Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires

Jingang Li,Rundi Yang,Yoonsoo Rho,Penghong Ci,Matthew Eliceiri,Hee K. Park,Junqiao Wu,Costas P. Grigoropoulos

DOI: https://doi.org/10.1021/acs.nanolett.2c04790

2022-11-16

Abstract:Carrier distribution and dynamics in semiconductor materials often govern their physical properties that are critical to functionalities and performance in industrial applications. The continued miniaturization of electronic and photonic devices calls for tools to probe carrier behavior in semiconductors simultaneously at the picosecond time and nanometer length scales. Here, we report pump-probe optical nanoscopy in the visible-near-infrared spectral region to characterize the carrier dynamics in silicon nanostructures. By coupling experiments with the point-dipole model, we resolve the size-dependent photoexcited carrier lifetime in individual silicon nanowires. We further demonstrate local carrier decay time mapping in silicon nanostructures with a sub-50 nm spatial resolution. Our study enables the nanoimaging of ultrafast carrier kinetics, which will find promising applications in the future design of a broad range of electronic, photonic, and optoelectronic devices.

Materials Science,Optics
Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Jun Hu,Yang Liu,Alex Maslov,Cun-Zheng Ning,Robert Dutton,Sung-Mo Kang

DOI: https://doi.org/10.1117/12.701210

2007-01-01

Abstract:The unique properties of semiconductor nanowires pose promising applications in optoelectronics such as photo-detectors and lasers. Owing to the increased surface/volume ratio, nanowire-based p-n junctions exhibit qualitatively different properties from those of bulk cases. These include weaker electrostatic screening and stronger fringe field effects. This work employs a general device simulator, PROPHET, to numerically investigate the unique electrical properties of p-n junctions in single nanowires and nanowire arrays. The implications of such effects in nanowire-based photo-detector design are also examined.
Electron Microscopy Probing Electron-Photon Interactions in SiC Nanowires with Ultrawide Energy and Momentum Match.

Jinlong Du,Jin-hui Chen,Yuehui Li,Ruochen Shi,Mei Wu,Yun-Feng Xiao,Peng Gao

DOI: https://doi.org/10.1021/acs.nanolett.2c01672

IF: 10.8

2022-01-01

Nano Letters

Abstract:Light-matter interactions are commonly probed by optical spectroscopy, which, however, has some fundamental limitations such as diffraction-limited spatial resolution, tiny momentum transfer, and noncontinuous excitation/detection. In this work, through the use of scanning transmission electron microscopy-electron energy loss spectroscopy (STEM-EELS) with ultrawide energy and momentum match and subnanometer spatial resolution, the longitudinal Fabry-Perot (FP) resonating modes and the transverse whispering-gallery modes (WGMs) in individual SiC nanowires are simultaneously excited and detected, which span from near-infrared (∼1.2 μm) to ultraviolet (∼0.2 μm) spectral regime, and the momentum transfer can range up to 108 cm-1. The size effects on the resonant spectra of nanowires are also revealed. This work provides an alternative technique to optical resonating spectroscopy and light-matter interactions in dielectric nanostructures, which is promising for modulating free electrons via photonic structures.
Ultrafast Exciton Dynamics in Silicon Nanowires

Damon A. Wheeler,Jian-An Huang,Rebecca J. Newhouse,Wen-Feng Zhang,Shuit-Tong Lee,Jin Z. Zhang

DOI: https://doi.org/10.1021/jz201597j

2012-01-01

Abstract:Ultrafast exciton dynamics in one-dimensional (1D) silicon nanowires (SiNWs) have been investigated using femtosecond transient absorption techniques. A strong transient bleach feature was observed from 500 to 770 nm following excitation at 470 nm. The bleach recovery was dominated by an extremely fast feature that can be fit to a triple exponential with time constants of 0.3, 5.4, and ∼75 ps, which are independent of probe wavelength. The amplitude and lifetime of the fast component were excitation intensity-dependent, with the amplitude increasing more than linearly and the lifetime decreasing with increasing excitation intensity. The fast decay is attributed to exciton-exciton annihilation upon trap state saturation. The threshold for observing this nonlinear process is sensitive to the porosity and surface properties of the sample. To help gain insight into the relaxation pathways, a four-state kinetic model was developed to explain the main features of the experimental dynamics data. The model suggests that after initial photoexcitation, conduction band (CB) electrons become trapped in the shallow trap (ST) states within 0.5 ps and are further trapped into deep trap (DT) states within 4 ps. The DT electrons finally recombine with the hole with a time constant of ∼500 ps, confirming the photophysical processes to which we assigned the decays.
Continuous Wave Spectroscopy Of Nonlinear Dynamics Of Si Nanocrystals In A Microdisk Resonator

Min Xie,Alessandro Pitanti,Mher Zh Ghulinyan,Deren Yang,Georg Pucker,Lorenzo L. Pavesi

DOI: https://doi.org/10.1103/PhysRevB.84.245312

IF: 3.7

2011-01-01

Physical Review B

Abstract:We report on a study of the recombination dynamics of silicon nanocrystals (Si-ncs) embedded in a planar whispering-gallery mode resonator. Fundamental properties of exciton dynamics in Si-ncs, in particular their absorption cross-section and excited carrier-related losses, can be extracted from continuous-wave spectroscopy by analyzing the resonance linewidths at different excitation powers. Observation of nonlinear drifts of mode peak positions in the same experiment allows us to model the nonlinear refractive index of the nanocrystalline material. The theoretical results confirm that the observed sublinear blue and linear redshifts of resonance peak positions are induced by excited carrier effects and thermal heating at low and high pump powers, respectively. The extracted thermo-optic coefficient, k(T) = 1.46 x 10(-4) K(-1), and excited carrier refraction, k(EC) = -1.07 x 10(-23) cm(3), in Si-ncs, are of relevance since they may induce important modulation of the fine modal structure of an optically active cavity.
Revealing interface-assisted charge-transfer mechanisms by using silicon nanowires as local probes.

Jindong Wang,Zhenxing Wang,Qiaochu Li,Lin Gan,Xinjun Xu,Lidong Li,Xuefeng Guo

DOI: https://doi.org/10.1002/anie.201209816

2013-01-01

Abstract:A semiconductor/environment interface has been formed in which suspended silicon nanowires (SiNWs) are in direct contact with photoactive TiO2 quantum dots. The photoactivity of TiO2 competes with the intrinsic photoresponses of p-type silicon nanowires. Rational control of the competitive mechanism realizes remarkable mirror-imaging photo-switching and superior rectifying effects in a single SiNW-based device. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Visualizing hot carrier dynamics by nonlinear optical microscopy at the atomic length scale

Yang Luo,Shaoxiang Sheng,Andrea Schirato,Alberto Martin-Jimenez,Giuseppe Della Valle,Giulio Cerullo,Klaus Kern,Manish Garg

2024-11-07

Abstract:Probing and manipulating the spatiotemporal dynamics of hot carriers in nanoscale metals is crucial to a plethora of applications ranging from nonlinear nanophotonics to single molecule photochemistry. The direct investigation of these highly non-equilibrium carriers requires the experimental capability of high energy resolution (~ meV) broadband femtosecond spectroscopy. When considering the ultimate limits of atomic scale structures, this capability has remained out of reach until date. Using a two color femtosecond pump-probe spectroscopy, we present here the real-time tracking of hot carrier dynamics in a well-defined plasmonic picocavity, formed in the tunnel junction of a scanning tunneling microscope (STM). The excitation of hot carriers in the picocavity enables ultrafast all optical control over the broadband (~ eV) anti Stokes electronic resonance Raman scattering (ERRS) and the four-wave mixing (FWM) signals generated at the atomic length scale. By mapping the ERRS and FWM signals from a single graphene nanoribbon (GNR), we demonstrate that both signals are more efficiently generated along the edges of the GNR: a manifestation of atomic-scale nonlinear optical microscopy. This demonstration paves the way to the development of novel ultrafast nonlinear picophotonic platforms, affording unique opportunities in a variety of contexts, from the direct investigation of non equilibrium light matter interactions in complex quantum materials, to the development of robust strategies for hot carriers harvesting in single molecules and the next generation of active metasurfaces with deep-sub-wavelength meta-atoms.

Optics,Applied Physics
Point Decoration of Silicon Nanowires: an Approach Toward Single- Molecule Electrical Detection**

Jindong Wang,Fangxia Shen,Zhenxing Wang,Gen He,Jinwen Qin,Nongyi Cheng,Maosheng Yao,Lidong Li,Xuefeng Guo

DOI: https://doi.org/10.1002/anie.201309438

2014-01-01

Angewandte Chemie

Abstract:Probing interactions of biological systems at the molecular level is of great importance to fundamental biology, diagnosis, and drug discovery. A rational bioassay design of lithographically integrating individual point scattering sites into electrical circuits is capable of realizing real-time, label-free biodetection of influenza H1N1 viruses with single-molecule sensitivity and high selectivity by using silicon nanowires as local reporters in combination with microfluidics. This nanocircuit-based architecture is complementary to more conventional optical techniques, but has the advantages of no bleaching problems and no fluorescent labeling. These advantages offer a promising platform for exploring dynamics of stochastic processes in biological systems and gaining information from genomics to proteomics to improve accurate molecular and even point-of-care clinical diagnosis.
Probing near-field light-matter interactions with single-molecule lifetime imaging

Dorian Bouchet,Jules Scholler,Guillaume Blanquer,Yannick De Wilde,Ignacio Izeddin,Valentina Krachmalnicoff

DOI: https://doi.org/10.1364/OPTICA.6.000135

2019-01-26

Abstract:Nanophotonics offers a promising range of applications spanning from the development of efficient solar cells to quantum communications and biosensing. However, the ability to efficiently couple fluorescent emitters with nanostructured materials requires to probe light-matter interactions at subwavelength resolution, which remains experimentally challenging. Here, we introduce an approach to perform super-resolved fluorescence lifetime measurements on samples that are densely labelled with photo-activatable fluorescent molecules. The simultaneous measurement of the position and the decay rate of the molecules provides a direct access to the local density of states (LDOS) at the nanoscale. We experimentally demonstrate the performance of the technique by studying the LDOS variations induced in the near field of a silver nanowire, and we show via a Cramér-Rao analysis that the proposed experimental setup enables a single-molecule localisation precision of 6 nm.

Optics
Differential Screening Technology in the Service of Ovarian Biology

Adriano B. Tavares,E. Adashi

DOI: https://doi.org/10.1023/A:1012792500403

Abstract:
Conductive-probe Atomic Force Microscopy Characterization of Silicon Nanowire

José Alvarez,Irène Ngo,Marie-Estelle Gueunier-Farret,Jean-Paul Kleider,Linwei Yu,Pere Rocai Cabarrocas,Simon Perraud,Emmanuelle Rouvière,Caroline Celle,Céline Mouchet,Jean-Pierre Simonato

DOI: https://doi.org/10.1186/1556-276x-6-110

2011-01-01

Nanoscale Research Letters

Abstract:The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (>1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.
Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Lior Shani,Jana Chaaban,Alec Nilson,Eliott Clerc,Gavin Menning,Colin Riggert,Pim Lueb,Marco Rossi,Ghada Badawy,Erik P A M Bakkers,Vlad S Pribiag

DOI: https://doi.org/10.1088/1361-6528/ad3257

IF: 3.5

2024-03-12

Nanotechnology

Abstract:Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1-D semiconductors.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Nanoscale Visualization of a Photoinduced Plasmonic Near-Field in a Single Nanowire by Free Electrons

Dingguo Zheng,Siyuan Huang,Chunhui Zhu,Peng Xu,Zian Li,Hong Wang,Jun Li,Huanfang Tian,Huaixin Yang,Jianqi Li

DOI: https://doi.org/10.1021/acs.nanolett.1c03203

IF: 10.8

2021-12-03

Nano Letters

Abstract:Swift electrons can undergo inelastic interactions not only with electrons but also with near-fields, which may result in an energy loss or gain. Developments in photon-induced near-field electron microscopy (PINEM) enable direct imaging of the plasmon near-field distribution with nanometer resolution. Here, we report an analysis of the surface plasmonic near-field structure based on PINEM observations of silver nanowires. Single-photon order-selected electron images revealed the wavelike and banded structure of electric equipotential regions for a confined near-field integral associated with typical absorption of photon quanta (<i>nℏω</i>). Multimodal plasmon oscillations and second-harmonic generation were simultaneously observed, and the polarization dependence of plasmon wavelength and symmetry properties were analyzed. Based on advanced imaging techniques, our work has implications for future studies of the localized-field structures at interfaces and visualization of novel phenomena in nanostructures, nanosensors, and plasmonic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Imaging ultrafast carrier transport in nanoscale devices using femtosecond photocurrent microscopy

B. H. Son,Jae-Ku Park,J. T. Hong,Ji-Yong. Park,Soonil. Lee,Y. H. Ahn

DOI: https://doi.org/10.1021/nn5042619

2014-06-02

Abstract:One-dimensional nanoscale devices, such as semiconductor nanowires (NWs) and single- walled carbon nanotubes (SWNTs), have been intensively investigated because of their potential application of future high-speed electronic, optoelectronic, and sensing devices. To overcome current limitations on the speed of contemporary devices, investigation of charge carrier dynamics with an ultrashort time scale is one of the primary steps necessary for developing high-speed devices. In the present study, we visualize ultrafast carrier dynamics in nanoscale devices using a combination of scanning photocurrent microscopy and time- resolved pump-probe techniques. We investigate transit times of carriers that are generated near one metallic electrode and subsequently transported toward the opposite electrode based on drift and diffusion motions. Carrier dynamics have been measured for various working conditions. In particular, the carrier velocities extracted from transit times increase for a larger negative gate bias, because of the increased field strength at the Schottky barrier.

Instrumentation and Detectors,Mesoscale and Nanoscale Physics
Nanoscale Probing of Localized Surface Phonon Polaritons in SiC Nanorods with Swift Electrons

Yuehui Li,Ruishi Qi,Ruochen Shi,Ning Li,Yuanwei Sun,Bingyao Liu,Peng Gao

DOI: https://doi.org/10.1016/j.scib.2020.02.026

2019-09-22

Abstract:Surface phonon polaritons hold much potential for subwavelength control and manipulation of light at the infrared to terahertz wavelengths. Here, aided by monochromatic scanning transmission electron microscopy - electron energy loss spectroscopy technique, we study the excitation of optical phonon modes in SiC nanorods. Surface phonon polaritons are modulated by the geometry and size of SiC nanorods. In particular, we study the dispersion relation, spatial dependence and geometry and size effects of surface phonon polaritons. These experimental results are in agreement with dielectric response theory and numerical simulation. Providing critical information for manipulating light in polar dielectrics, these findings should be useful for design of novel nanoscale phonon-photonic devices.

Mesoscale and Nanoscale Physics
Imaging Electrical Conduction through InAs Nanowires

Ania C. Bleszynski,Floris A. Zwanenburg,Robert M. Westervelt,Aaroud L. Roest,Erik P. A. M. Bakkers,Leo P. Kouwenhoven

DOI: https://doi.org/10.48550/arXiv.cond-mat/0610514

2006-10-18

Abstract:We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowires, elucidating the physics of nanowire devices on a local scale. A charged SPM tip is used as a movable gate. Images of nanowire conductance vs. tip position spatially map the conductance of InAs nanowires at liquid He temperatures. Plots of conductance vs. back gate voltage without the tip present show complex patterns of Coulomb-blockade peaks. Images of nanowire conductance identify multiple quantum dots located along the nanowire - each dot is surrounded by a series of concentric rings corresponding to Coulomb blockade peaks. An image locates the dots and provides information about their size. The rings around individual dots interfere with each other like Coulomb blockade peaks of multiple quantum dots in series. In this way, the SPM tip can probe complex multi-dot systems by tuning the charge state of individual dots. The nanowires were grown from metal catalyst particles and have diameters ~ 80 nm and lengths 2 to 3 um.

Mesoscale and Nanoscale Physics
Probing carrier and phonon transport in semiconductors all at once through frequency-domain photo-reflectance

Qichen Song,Sorren Warkander,Samuel C. Huberman

2023-11-09

Abstract:Semiconductor devices favor high carrier mobility for reduced Joule heating and high thermal conductivity for rapid heat dissipation. The ability to accurately characterize the motion of charge carriers and heat carriers is necessary to improve the performance of electronic devices. However, the conventional approaches of measuring carrier mobility and thermal conductivity require separate and independent measurement techniques. These techniques often involve invasive probing, such as depositing thin metal films on the sample as Ohmic contacts for characterizing electrical transport or as optical transducers for characterizing thermal transport, which becomes more cumbersome as the geometry of the semiconductor devices becomes small and complicated. Here we demonstrate a non-contact frequency-domain pump-probe method that requires no sample pretreatment to simultaneously probe carrier and phonon transport. We find that the optical reflectance depends on both excess carriers and phonons in response to exposure to a modulated continuous-wave pump laser source. By modeling the ambipolar diffusion of photo-induced excess carriers, energy transfer between electrons and phonons, and phonon diffusion, we are able to extract temperature-dependent electrical and thermal transport coefficients in Si, Ge, SiGe and GaAs. The intrinsically weak perturbation from the continuous-wave pump laser avoids invoking the highly nonequilibrium transport regime that may arise when using a pulsed laser and allows for accurate assessment of electrical transport in actual devices. Our approach provides a convenient and accurate platform for the study of the charge transport and energy dissipation in semiconductors.

Mesoscale and Nanoscale Physics,Applied Physics
Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures

Phillip D. Keathley,William P. Putnam,Guillaume Laurent,Luis F. Velásquez-García,Franz X. Kärtner

DOI: https://doi.org/10.48550/arXiv.1708.05265

2017-08-17

Abstract:We perform a detailed experimental and theoretical study of the transition from multiphoton to optical-field photoemission from n-doped, single-crystal silicon nanotips. Around this transition, we measure an enhanced emission rate as well as intensity-dependent structure in the photoelectron yield from the illuminated nanostructures. Numerically solving the time-dependent Schrödinger equation (TDSE), we demonstrate that the excess emission derives from the build-up of standing electronic wavepackets near the surface of the silicon, and the intensity dependent structure in this transition results from the increased ponderomotive potential and channel closing effects. By way of time-dependent perturbation theory (TDPT), we then show that the visibility of intensity dependent structure, the transition rate from multiphoton to optical-field emission, and scaling rate at high intensities are all consistent with a narrow band of ground-state energies near the conduction band dominating the emission process in silicon. These results highlight the importance of considering both coherent electron wavepacket dynamics at the emitter surface as well as the ground-state energy distribution when interpreting strong-field photoemission from solids.

Mesoscale and Nanoscale Physics,Optics
Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Xiaoping Liu,Jeffrey B. Driscoll,Jerry I. Dadap,Richard M. Osgood,Solomon Assefa,Yurii A. Vlasov,William M. J. Green

DOI: https://doi.org/10.1364/oe.19.007778

IF: 3.8

2011-01-01

Optics Express

Abstract:We report an experimental study of picosecond pulse propagation through a 4-mm-long Si nanophotonic wire with normal dispersion, at excitation wavelengths from 1775 to 2250 nm. This wavelength range crosses the mid-infrared two-photon absorption edge of Si at ~2200 nm. Significant reduction in nonlinear loss due to two-photon absorption is measured as excitation wavelengths approach 2200 nm. At high input power, self-phase modulation is clearly demonstrated by the development of power-dependant spectral fringes. Asymmetry and blue-shift in the appearance of the spectral fringes at 1775 nm versus 2200 nm is further shown to originate from a strong reduction in the intra-pulse density of two-photon absorption-generated free carriers and the associated free-carrier dispersion. Analysis of experimental data and comparison with numerical simulations illustrates that the two-photon absorption coefficient β(TPA) obtained here from nanophotonic wire measurements is in reasonable agreement with prior measurements of bulk silicon crystals, and that bulk Si values of the nonlinear refractive index n(2) can be confidently incorporated in the modeling of pulse propagation in deeply-scaled waveguide structures.
Near-Field Nanoimaging of Phases and Carrier Dynamics in Vanadium Dioxide Nanobeams

Rundi Yang,Jingang Li,Yuhang Cai,Brian W. Blankenship,Junqiao Wu,Costas P. Grigoropoulos

DOI: https://doi.org/10.1021/acsphotonics.4c00848

IF: 7

2024-08-27

ACS Photonics

Abstract:The stable coexistence of insulating and metallic phases in strained vanadium dioxide (VO(2)) has garnered significant research interest due to the intriguing phase transition phenomena. However, the temporal behavior of charge carriers in different phases of VO(2) remains elusive. Herein, we employ near-field optical nanoscopy to capture nanoscale alternating phase domains in bent VO(2) nanobeams. By conducting transient measurements across the different phases, we observed a prolonged carrier...

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology

Probing Nanoscale Carrier Dynamics in Silicon Nanowires

Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Electron Microscopy Probing Electron-Photon Interactions in SiC Nanowires with Ultrawide Energy and Momentum Match.

Ultrafast Exciton Dynamics in Silicon Nanowires

Continuous Wave Spectroscopy Of Nonlinear Dynamics Of Si Nanocrystals In A Microdisk Resonator

Revealing interface-assisted charge-transfer mechanisms by using silicon nanowires as local probes.

Visualizing hot carrier dynamics by nonlinear optical microscopy at the atomic length scale

Point Decoration of Silicon Nanowires: an Approach Toward Single- Molecule Electrical Detection**

Probing near-field light-matter interactions with single-molecule lifetime imaging

Differential Screening Technology in the Service of Ovarian Biology

Conductive-probe Atomic Force Microscopy Characterization of Silicon Nanowire

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Nanoscale Visualization of a Photoinduced Plasmonic Near-Field in a Single Nanowire by Free Electrons

Imaging ultrafast carrier transport in nanoscale devices using femtosecond photocurrent microscopy

Nanoscale Probing of Localized Surface Phonon Polaritons in SiC Nanorods with Swift Electrons

Imaging Electrical Conduction through InAs Nanowires

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photo-reflectance

Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures

Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Near-Field Nanoimaging of Phases and Carrier Dynamics in Vanadium Dioxide Nanobeams