Demonstration of On-Chip Gigahertz Acousto-Optic Modulation at Near-Visible Wavelengths

Yue Yu,Lai Wang,Xiankai Sun

DOI: https://doi.org/10.1364/cleo_si.2021.sw2c.6

2021-01-01

Abstract:We demonstrated on-chip acousto-optic modulation at near-visible wavelengths on an etchless lithium niobate integrated platform. We obtained an intrinsic optical Q of 40,000 and measured acousto-optic modulation with the modulation frequency up to 2.44 GHz.

What problem does this paper attempt to address?

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ziliang Ruan,Kaixuan Chen,Zong Wang,Xuancong Fan,Ranfeng Gan,Lu Qi,Yiwei Xie,Changjian Guo,Zhonghua Yang,Naidi Cui,Liu Liu

DOI: https://doi.org/10.1002/lpor.202200327

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.
Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

Jingya Xie,Xiaoyong Hu,Chong Li,Feifan Wang,Peizhen Xu,Limin Tong,Hong Yang,Qihuang Gong

DOI: https://doi.org/10.1002/adom.201870069

IF: 9

2018-01-01

Advanced Optical Materials

Abstract:On-chip electro-optic and optoelectric dual modulation is realized by Xiaoyong Hu and coworkers (article number 1800374) using a ZnO nanowire covered photonic-crystal nanocavity. A weak 0.4-microwatt signal light induces large modulation-depth of 60% in the electric signal, while a small gate voltage of 1.5 Volt induces large modulation-depth of 75% for the signal light. This paves the way for achieving on-chip photon–electric signal interconversion, and multifunctional optoelectronic integrated devices.
Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

Renhong Gao,Haisu Zhang,Fang Bo,Wei Fang,Zhenzhong Hao,Ni Yao,Jintian Lin,Jianglin Guan,Li Deng,Min Wang,Lingling Qiao,Ya Cheng

DOI: https://doi.org/10.1088/1367-2630/ac3d52

2021-01-01

New Journal of Physics

Abstract:Microresonators of ultrahigh quality (Q) factors represent a crucial type of photonic devices aiming at ultra-high spectral resolution, ultra-high sensitivity to the environmental perturbations, and efficient nonlinear wavelength conversions at low threshold pump powers. Lithium niobate on insulator (LNOI) microdisks of high Q factors are particularly attractive due to its large second-order nonlinear coefficient and strong electro-optic property. In this letter, we break through the long standing bottleneck in achieving the Q factors of LNOI microresonators beyond 108, which approaches the intrinsic material absorption limit of lithium niobate (LN). The ultra-high Q factors give rise to a rich family of nonlinear optical phenomena from optical parametric oscillation (OPO) to harmonics generation with unprecedented characteristics including ultra-low pump threshold, high wavelength conversion efficiency, and ultra-broad operation bandwidth. Specifically, the threshold of OPO is measured to be only 19.6 μW, and the absolute conversion efficiency observed in the second harmonic generation reaches 23%. The record-breaking performances of the on-chip ultra-high Q LNOI microresonators will have profound implication for both photonic research and industry.
On-chip 7 GHz acousto-optic modulators for visible wavelengths

Ji-Zhe Zhang,Yu Zeng,Qing Qin,Yuan-Hao Yang,Zheng-Hui Tian,Jia-Qi Wang,Chun-Hua Dong,Xin-Biao Xu,Ming-Yong Ye,Guang-Can Guo,Chang-Ling Zou

2024-11-24

Abstract:A chip-integrated acousto-optic phase modulator tailored for visible optical wavelengths has been developed. Utilizing the lithium niobate on sapphire platform, the modulator employs a 7 GHz surface acoustic wave, excited by an interdigital transducer and aligned perpendicular to the waveguide. This design achieves efficient phase modulation of visible light within a compact device length of merely 200 microns, while holds the advantages of easy fabrication and high stability due to simple unsuspended structure. Remarkably, in this high-frequency acoustic regime, the acoustic wavelength becomes comparable to the optical wavelength, resulting in a notable single-sideband modulation behavior. This observation underscores the phase delay effects in the acousto-optics interactions, and opens up new aspects for realizing functional visible photonic devices and its integration with atom- and ion-based quantum platforms.

Optics,Applied Physics
On-Chip Electro-Optic Tuning of A Lithium Niobate Microresonator with Integrated In-Plane Microelectrodes

Min Wang,Yingxin Xu,Zhiwei Fang,Yang Liao,Peng Wang,Wei Chu,Lingling Qiao,Jintian Lin,Wei Fang,Ya Cheng

DOI: https://doi.org/10.1364/oe.25.000124

IF: 3.8

2017-01-01

Optics Express

Abstract:We report on on-chip electro-optic tuning of high-Q lithium niobate microresonator with integrated in-plane microelectrodes fabricated by femtosecond laser. Due to the compact spatial arrangement, high electro-optical tuning coefficient of 3.41 pm/V was demonstrated.
Demonstration of High-Speed Thin-Film Lithium-Niobate-on-insulator Optical Modulators at the 2-Μm Wavelength.

Bingcheng Pan,Jinyao Hu,Yishu Huang,Lijia Song,Jingyi Wang,Pengxin Chen,Zejie Yu,Liu,Daoxin Dai

DOI: https://doi.org/10.1364/oe.416908

IF: 3.8

2021-01-01

Optics Express

Abstract:Optical communication wavelength is being extended from the near-infrared band of 1.31/1.55 µm to the mid-infrared band of 2 µm or beyond for satisfying the increasing demands for high-capacity long-distance data transmissions. An efficient electro-optic (EO) modulator working at 2 µm is highly desired as one of the indispensable elements for optical systems. Lithium niobate (LiNbO3) with a large second-order nonlinear coefficient is widely used in various EO modulators. Here, we experimentally demonstrate the first Mach-Zehnder EO modulator working at 2 µm based on the emerging thin-film LiNbO3 platform. The demonstrated device exhibits a voltage-length product of 3.67 V·cm and a 3-dB-bandwidth of >22 GHz which is limited by the 18 GHz response bandwidth of the photodetector available in the lab. Open eye-diagrams of the 25 Gb/s on-off keying (OOK) signals modulated by the fabricated Mach-Zehnder EO modulator is also measured experimentally with a SNR of about 14 dB.
High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

Nuo Chen,Yalong Yu,Kangping Lou,Xuanjian He,Qingjiao Mi,Ying Huang,Hengsong Yue,Tao Chu

DOI: https://doi.org/10.1364/iprsn.2023.ith2b.1

2023-01-01

Abstract:We propose two novel methods to enhance the modulation efficiency of thin-film lithium niobate electro-optic modulators. The proposed modulator achieves a modulation efficiency of 1.2 V∙cm, while maintaining a broad EO bandwidth.
Numerical analysis of on-chip acousto-optic modulators for visible wavelengths

Qing Qin,Ji-Ze Zhang,Yuanhao Yang,Xin-Biao Xu,Yu Zeng,Jia-Qi Wang,Chang-Ling Zou,Guang-can Guo,Lin Xiu-Min,Mingyong Ye,Ji-Zhe Zhang,Yuan-Hao Yang,Guang-Can Guo,Xiu-Min Lin,Ming-Yong Ye

DOI: https://doi.org/10.1364/ao.516362

IF: 1.9

2024-02-21

Applied Optics

Abstract:Qing Qin, Ji-Zhe Zhang, Yuan-Hao Yang, Xin-Biao Xu, Yu Zeng, Jia-Qi Wang, Chang-Ling Zou, Guang-Can Guo, Xiu-Min Lin, Ming-Yong Ye On-chip acousto-optic modulators that operate at an optical wavelength of 780 nm and a microwave frequency of 6.835 GHz are ... [Appl. Opt. 63, 1719-1726 (2024)]

optics
Unveiling Efficient Acousto-Optic Modulation in Silicon Photonic Devices via Lithium Niobate Using Transfer Printing

Siyu Xu,Weixin Liu,Xianhao Le,Chengkuo Lee

DOI: https://doi.org/10.1021/acs.nanolett.4c03622

IF: 10.8

2024-09-21

Nano Letters

Abstract:Piezo-optomechanics presents a promising route to convert microwave signals to the optical domain, implementing processing tasks that are challenging using conventional electronics. The surge of integrated photonics facilitates the exploitation of localized light-sound interactions toward new technological paradigms. However, efficient acousto-optic interaction has yet to be fully exploited in silicon due to the absence of piezoelectricity, despite its maturity in photonic integrated circuits....

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Cavity-enhanced acousto-optic modulators on polymer-loaded lithium niobate integrated platform

Zhi Jiang,Danyang Yao,Xu Ran,Yu Gao,Jianguo Wang,Xuetao Gan,Yan Liu,Yue Hao,Genquan Han

2024-11-07

Abstract:On chip acousto-optic (AO) modulation represents a significant advancement in the development of highly integrated information processing systems. However, conventional photonic devices face substantial challenges in achieving efficient conversion due to the limited overlap between acoustic waves and optical waves. In this study, we address this limitation by demonstrating an enhanced conversion effect of photonic crystal nanobeam cavities (PCNBCs) in AO modulation on a polymer-loaded lithium niobate integrated platform. Attributed to the high ratio of quality factor (Q) to mode volume (V) and optimal light-sound overlap within the nanocavity, PCNBCs-based AO modulator exhibits a significantly enhanced extinction ratio of 38 dB with a threshold RF power below -50 dBm, which is two orders of magnitude lower than that based on micro-ring resonator (MRRs). In addition, robust digital amplitude shift keying modulations using selected RF and optical channels of the PCNBCs-enhanced AO modulators. These findings validate the compelling properties of the PCNBCs photonic platform, establishing it as a promising candidate for on-chip integrated microwave photonics, optical transceivers, and computing applications.

Optics,Applied Physics
High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform

Pu Zhang,Haijin Huang,Yongheng Jiang,Xu Han,Huifu Xiao,Andreas Frigg,Thach G Nguyen,Andreas Boes,Guanghui Ren,Yikai Su,Yonghui Tian,Arnan Mitchell

DOI: https://doi.org/10.1364/OL.446222

2021-12-01

Abstract:Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Letter, we design and experimentally demonstrate a Mach-Zehnder interferometer-based modulator on a silicon nitride loaded LNOI platform, which not only takes full advantage of the excellent EO effect of LiNbO3, but also avoids the direct etching of LiNbO3 thin film. The measured half-wave voltage length product of the fabricated modulator is 2.24 V·cm, and the extinction ratio is ∼20dB. Moreover, the 3 dB EO bandwidth is ∼30GHz, while the modulated data rate for on-off key signals can reach up to 80 Gbps.
Sub-1 Volt and high-bandwidth visible to near-infrared electro-optic modulators

Dylan Renaud,Daniel Rimoli Assumpcao,Graham Joe,Amirhassan Shams-Ansari,Di Zhu,Yaowen Hu,Neil Sinclair,Marko Loncar

DOI: https://doi.org/10.1038/s41467-023-36870-w

IF: 16.6

2023-03-28

Nature Communications

Abstract:Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product ( V π L ), optical loss, and EO bandwidth. However, applications in optical imaging, optogenetics, and quantum science generally require devices operating in the visible-to-near-infrared (VNIR) wavelength range. Here, we realize VNIR amplitude and phase modulators featuring V π L 's of sub-1 V ⋅ cm, low optical loss, and high bandwidth EO response. Our Mach-Zehnder modulators exhibit a V π L as low as 0.55 V ⋅ cm at 738 nm, on-chip optical loss of ~0.7 dB/cm, and EO bandwidths in excess of 35 GHz. Furthermore, we highlight the opportunities these high-performance modulators offer by demonstrating integrated EO frequency combs operating at VNIR wavelengths, with over 50 lines and tunable spacing, and frequency shifting of pulsed light beyond its intrinsic bandwidth (up to 7x Fourier limit) by an EO shearing method.

multidisciplinary sciences
Highly efficient acousto-optic modulation using nonsuspended thin-film lithium niobate-chalcogenide hybrid waveguides

Lei Wan,Zhiqiang Yang,Wenfeng Zhou,Meixun Wen,Tianhua Feng,Siqing Zeng,Dong Liu,Huan Li,Jingshun Pan,Ning Zhu,Weiping Liu,Zhaohui Li

DOI: https://doi.org/10.1038/s41377-022-00840-6

2022-05-20

Light: Science and Applications

Abstract:A highly efficient on-chip acousto-optic modulator is as a key component and occupies an exceptional position in microwave-to-optical conversion. Homogeneous thin-film lithium niobate is preferentially employed to build the suspended configuration for the acoustic resonant cavity, with the aim of improving the modulation efficiency of the device. However, the limited cavity length and complex fabrication recipe of the suspended prototype restrain further breakthroughs in modulation efficiency and impose challenges for waveguide fabrication. In this work, based on a nonsuspended thin-film lithium niobate-chalcogenide glass hybrid Mach–Zehnder interferometer waveguide platform, we propose and demonstrate a built-in push-pull acousto-optic modulator with a half-wave-voltage-length product V π L as low as 0.03 V cm that presents a modulation efficiency comparable to that of a state-of-the-art suspended counterpart. A microwave modulation link is demonstrated using our developed built-in push-pull acousto-optic modulator, which has the advantage of low power consumption. The nontrivial acousto-optic modulation performance benefits from the superior photoelastic property of the chalcogenide membrane and the completely bidirectional participation of the antisymmetric Rayleigh surface acoustic wave mode excited by the impedance-matched interdigital transducer, overcoming the issue of low modulation efficiency induced by the incoordinate energy attenuation of acoustic waves applied to the Mach–Zehnder interferometer with two arms in traditional push-pull acousto-optic modulators.
High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate

Oguz Tolga Celik,Christopher J Sarabalis,Felix M Mayor,Hubert S Stokowski,Jason F Herrmann,Timothy P McKenna,Nathan R A Lee,Wentao Jiang,Kevin K S Multani,Amir H Safavi-Naeini

DOI: https://doi.org/10.1364/OE.460119

2022-06-20

Abstract:Integrated photonics operating at visible-near-infrared (VNIR) wavelengths offer scalable platforms for advancing optical systems for addressing atomic clocks, sensors, and quantum computers. The complexity of free-space control optics causes limited addressability of atoms and ions, and this remains an impediment on scalability and cost. Networks of Mach-Zehnder interferometers can overcome challenges in addressing atoms by providing high-bandwidth electro-optic control of multiple output beams. Here, we demonstrate a VNIR Mach-Zehnder interferometer on lithium niobate on sapphire with a CMOS voltage-level compatible full-swing voltage of 4.2 V and an electro-optic bandwidth of 2.7 GHz occupying only 0.35 mm2. Our waveguides exhibit 1.6 dB/cm propagation loss and our microring resonators have intrinsic quality factors of 4.4 × 105. This specialized platform for VNIR integrated photonics can open new avenues for addressing large arrays of qubits with high precision and negligible cross-talk.
Integrated microwave acousto-optic frequency shifter on thin-film lithium niobate

Linbo Shao,Neil Sinclair,James Leatham,Yaowen Hu,Mengjie Yu,Terry Turpin,Devon Crowe,Marko Loncar

DOI: https://doi.org/10.1364/OE.397138

2020-05-08

Abstract:Electrically driven acousto-optic devices that provide beam deflection and optical frequency shifting have broad applications from pulse synthesis to heterodyne detection. Commercially available acousto-optic modulators are based on bulk materials and consume Watts of radio frequency power. Here, we demonstrate an integrated 3-GHz acousto-optic frequency shifter on thin-film lithium niobate, featuring a carrier suppression over 30 dB. Further, we demonstrate a gigahertz-spaced optical frequency comb featuring more than 200 lines over a 0.6-THz optical bandwidth by recirculating the light in an active frequency shifting loop. Our integrated acousto-optic platform leads to the development of on-chip optical routing, isolation, and microwave signal processing.

Applied Physics,Optics
Silicon–Lithium Niobate Hybrid Intensity and Coherent Modulators Using a Periodic Capacitively Loaded Traveling-Wave Electrode

Zong Wang,Gengxin Chen,Ziliang Ruan,Ranfeng Gan,Pucheng Huang,Zhiwen Zheng,Liwang Lu,Jun Li,Changjian Guo,Kaixuan Chen,Liu Liu

DOI: https://doi.org/10.1021/acsphotonics.2c00263

IF: 7

2022-07-21

ACS Photonics

Abstract:High-performance silicon and thin-film lithium niobate hybrid electro-optic modulators are demonstrated. In order to break the voltage–bandwidth limit in a normal traveling-wave modulator, a periodic capacitively loaded traveling-wave electrode is employed in this hybrid platform. The silicon substrate is undercut-etched to achieve index matching of the optical wave and microwave. A hybrid waveguide with a lithium niobate thin film bonded on a silicon wire is employed. Lithium niobate etching is not required for making the hybrid optical waveguides. We realize an intensity modulator of 12.5 mm long modulation section, which exhibits a low half-wave voltage of 1.7 V and a large 3 dB modulation bandwidth of >70 GHz. Data transmissions with various modulation formats beyond 100 Gbit/s are successfully achieved with dynamic extinction ratios of >8 dB. Combining the advantages of the silicon and thin-film lithium niobate platforms, a compact dual polarization coherent modulator is also experimentally demonstrated, on which 96 Gbaud 16-level quadrature amplitude modulation signals in both polarizations are successfully transmitted.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Ultra-compact Lithium Niobate Microcavity Electro-Optic Modulator beyond 110 GHz

Bingcheng Pan,Hongxuan Liu,Haochen Xu,Yishu Huang,Huan Li,Zejie Yu,Liu Liu,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1016/j.chip.2022.100029

2022-01-01

Chip

Abstract:A lithium-niobate-on-insulator (LNOI) electro-optic (EO) modulator based on a 2 × 2 FP-cavity was designed and realized with an ultra-compact footprint and an ultra-high bandwidth. A comprehensive analysis on the present LNOI FP-cavity modulator was conducted to reveal the dependence of modulation bandwidth and modulation efficiency on the cavity Q-factor and the operation wavelength detuning to the resonance. In particular, the 2 × 2 FP cavity was designed to achieve an optimal Q factor by reducing the reflectivity of reflectors and the cavity length, thus reducing the photon lifetime in the cavity . An ultra-short effective cavity length of only∼ 50 µm was achieved for the designed LNOI FP-cavity modulator, with itsfootprint being as compact as ∼ 4 × 500 µm2. It was demonstrated theoretically that the modulation bandwidth could be improved significantly to be over 200 GHz by utilizing the peaking enhancement effect. The fabricated device exhibited an excess loss of ∼ 1 dB and an extinction ratio of ∼ 20 dB in experiments, while the measured 3-dB bandwidth was higher than 110 GHz (beyond the maximal range of the facilities in experiments). Up till now, to our best knowledge, this has been the first LNOI microcavity modulator with a bandwidth higher than 110 GHz. Finally, high-quality eye-diagrams of 100 Gbps on-off keying (OOK) and 140 Gbps 4-pulse amplitude modulation (PAM4) signals were demonstrated experimentally, and the energy consumption for the OOK signals was as low as 4.5 fJ/bit.
Ultra-compact acousto-optic modulation using on-chip integrated Bragg gratings on lithium niobate-chalcogenide hybrid platform

zhiqiang yang,Dong Liu,Siqing Zeng,YANG shuixian,Qingming Chen,zhenshi chen,Lei Wan

DOI: https://doi.org/10.1364/oe.510759

IF: 3.8

2024-02-02

Optics Express

Abstract:Zhiqiang Yang, Dong Liu, Siqing Zeng, Shuixian Yang, Qingming Chen, Zhenshi Chen, Lei Wan, Yan Li An ultra-compact and efficient acousto-optic modulator based on a thin-film lithium niobate-chalcogenide (ChG) hybrid platform was designed ... [Opt. Express 32, 5410-5417 (2024)]

optics
High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform

Mengyue Xu,Mingbo He,Hongguang Zhang,Jian Jian,Ying Pan,Xiaoyue Liu,Lifeng Chen,Xiangyu Meng,Hui Chen,Zhaohui Li,Xi Xiao,Shaohua Yu,Siyuan Yu,Xinlun Cai

DOI: https://doi.org/10.1038/s41467-020-17806-0

2020-06-28

Abstract:The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demonstrate integrated thin-film lithium niobate in-phase/quadrature modulators that fulfil these requirements simultaneously. The presented devices exhibit greatly improved overall performance (half-wave voltage, bandwidth and optical loss) over traditional lithium niobate counterparts, and support modulation data rate up to 320 Gbit s-1. Our devices pave new routes for future high-speed, energy-efficient, and cost-effective communication networks.

Applied Physics
The first demonstration of high-speed LiNbO3 thin-film optical modulators operating at the wavelength of 2 mu m

Bingcheng Pan,Jinyao Hu,Yishu Huang,Lijia Song,Jingyi Wang,Pengxin Chen,Liu Liu,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2020.m4d.7

2020-01-01

Abstract:We demonstrate the first high-speed LiNbO3 thin-film optical modulators operating at 2 pin wavelength. The measured (pi).L is 3.67 V.cm, and the electro-optic bandwidth is > 22 GHz (beyond the measurement limit of photodetector). (C) 2020 The Author(s)

Demonstration of On-Chip Gigahertz Acousto-Optic Modulation at Near-Visible Wavelengths

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

On-chip 7 GHz acousto-optic modulators for visible wavelengths

On-Chip Electro-Optic Tuning of A Lithium Niobate Microresonator with Integrated In-Plane Microelectrodes

Demonstration of High-Speed Thin-Film Lithium-Niobate-on-insulator Optical Modulators at the 2-Μm Wavelength.

High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

Numerical analysis of on-chip acousto-optic modulators for visible wavelengths

Unveiling Efficient Acousto-Optic Modulation in Silicon Photonic Devices via Lithium Niobate Using Transfer Printing

Cavity-enhanced acousto-optic modulators on polymer-loaded lithium niobate integrated platform

High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform

Sub-1 Volt and high-bandwidth visible to near-infrared electro-optic modulators

Highly efficient acousto-optic modulation using nonsuspended thin-film lithium niobate-chalcogenide hybrid waveguides

High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate

Integrated microwave acousto-optic frequency shifter on thin-film lithium niobate

Silicon–Lithium Niobate Hybrid Intensity and Coherent Modulators Using a Periodic Capacitively Loaded Traveling-Wave Electrode

Ultra-compact Lithium Niobate Microcavity Electro-Optic Modulator beyond 110 GHz

Ultra-compact acousto-optic modulation using on-chip integrated Bragg gratings on lithium niobate-chalcogenide hybrid platform

High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform

The first demonstration of high-speed LiNbO3 thin-film optical modulators operating at the wavelength of 2 mu m