Abstract:The continuous growth of global data traffic over the past three decades, along with advances in disaggregated computing architectures, presents significant challenges for optical transceivers in communication networks and high-performance computing systems. Specifically, there is a growing need to significantly increase data rates while reducing energy consumption and cost. High-performance optical modulators based on materials such as InP, thin-film lithium niobate (LiNbO3), or plasmonics have been developed, with LiNbO3 excelling in high-speed and low-voltage modulation. Nonetheless, the widespread industrial adoption of thin film LiNbO3 remains compounded by the rather high cost of the underlying 'on insulator' substrates -- in sharp contrast to silicon photonics, which can benefit from strong synergies with high-volume applications in conventional microelectronics. Here, we demonstrate an integrated 110 GHz modulator using thin-film lithium tantalate (LiTaO3) -- a material platform that is already commercially used for millimeter-wave filters and that can hence build upon technological and economic synergies with existing high-volume applications to offer scalable low-cost manufacturing. We show that the LiTaO3 photonic integrated circuit based modulator can support 176 GBd PAM8 transmission at net data rates exceeding 400 Gbit/s. Moreover, we show that using silver electrodes can reduce microwave losses compared to previously employed gold electrodes. Our demonstration positions LiTaO3 modulator as a novel and highly promising integration platform for next-generation high-speed, energy-efficient, and cost-effective transceivers.

The first demonstration of high-speed LiNbO3 thin-film optical modulators operating at the wavelength of 2 mu m

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Demonstration of High-Speed Thin-Film Lithium-Niobate-on-insulator Optical Modulators at the 2-Μm Wavelength.

Ultra-wide Bandwidth Thin-film LiNbO<sub>3</sub> Modulator with Record-Low Half-wave-voltage Length Product

Ultra-wide Bandwidth Thin-film LiNbO<inf>3</inf> Modulator with Record-Low Half-wave-voltage Length Product

Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

High-speed Silicon Modulators for the 2 Μm Wavelength Band

High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

112Gb/s PAM4 Electro-Optic Modulator Based on Thin-film LN-on-insulator

Thin-film lithium-niobate-on-insulator modulators at a wavelength of 1064nm for high-power applications

Electro-optic Characterization of Thin-Film Lithium Niobate Modulators at Frequencies Up to 325 GHz

Broadband and low driving voltage 15GHz Ti:LiNbO3 electro-optic modulator

High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform

Low half-wave-voltage, ultra-high bandwidth thin-film LiNbO3 modulator based on hybrid waveguide and periodic capacitively loaded electrodes

Fast Thermo-Optical Modulators with Doped-Silicon Heaters Operating at 2 Μm.

Ultrabroadband thin-film lithium tantalate modulator for high-speed communications

Wide-bandwidth High-Frequency Electro-Optic Modulator Based on Periodically Poled LiNbO3

High-speed mid-infrared Mach–Zehnder electro-optical modulators in lithium niobate thin film on sapphire

Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission

Systematic Investigation of Millimeter-Wave Optic Modulation Performance in Thin-Film Lithium Niobate