Abstract:Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks1,2 and microwave-photonic systems3,4. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal–oxide–semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades9, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications5,10,11 including feed-forward photonic quantum computation.

High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

Heterogeneous Silicon-on-lithium Niobate Electro-Optic Modulator for 100-Gbaud Modulation

High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

High-performance thin-film lithium niobate electro-optic modulator based on etching slot and ultrathin silicon film

Demonstration of High-Speed Thin-Film Lithium-Niobate-on-insulator Optical Modulators at the 2-Μm Wavelength.

Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages

Integrated lithium niobate intensity modulator on a silicon handle with slow-wave electrodes

Ultra-high extinction dual-output thin-film lithium niobate intensity modulator

110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator

High-Speed Modulator With Integrated Termination Resistor Based on Hybrid Silicon and Lithium Niobate Platform

Monolithic silicon nitride electro-optic modulator enabled by optically-assisted poling

Silicon–Lithium Niobate Hybrid Intensity and Coherent Modulators Using a Periodic Capacitively Loaded Traveling-Wave Electrode

Hybrid Silicon Photonic-Lithium Niobate Electro-Optic Mach-Zehnder Modulator Beyond 100 GHz Bandwidth

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Compact 100gbaud Driverless Thin-Film Lithium Niobate Modulator on a Silicon Substrate

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

110-GHz bandwidth integrated lithium niobate modulator without direct lithium niobate etching

High-speed Silicon Modulators for the 2 Μm Wavelength Band