Frequency-domain Thermal Coupling Model of Multi-chip Parallel Power Module

Tianle Cai,Dangsheng Zhou,Tianhao Wu,Ke Ma
DOI: https://doi.org/10.1109/syps59767.2023.10268128
IF: 5.462
2024-01-01
IEEE Journal of Emerging and Selected Topics in Power Electronics
Abstract:In high-power applications, multi-chip parallel power modules have been widely used. When analyzing the thermal behavior of multi-chip parallel modules, the specific internal parallel structure and power loss characteristics under working condition should be taken into account. Existing thermal coupling models require individual chip heating for extracting thermal coupling parameters, which is not feasible in multi-chip parallel modules. Moreover, the requirement for extracting numerous parameters adds complexity to practical applications. In this paper, a novel thermal coupling model that combines multiple chips for modelling is proposed. This method analyses the power loss characteristics of power modules under operating condition and simplifies the input of the model. The model is applicable to multi-chip parallel power modules and has the advantage of requiring fewer parameters to be identified. This model has been validated by finite element simulation.
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