Abstract:An E-band power amplifier (PA) with a two-way power combiner is designed in 65 nm CMOS technology. Using a two-stage differential common-source (CS) PA topology with transformer-based matching networks, the circuit reaches a maximum gain of 12.9 dB with a 3-dB bandwidth from 67.1-80.5GHz (13.4 GHz). Both stages are biased in class A to obtain high gain and linearity. Meanwhile, by reasonably designing and optimizing the power combiner, the PA achieves high output power and efficiency. At the supply voltage of 1V, the PA reaches a saturated output power (P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</inf> ) of 17 dBm, an output 1 dB compression power (OP <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</inf> ) of 13.8 dBm and a peak power-added efficiency (PAE) of 15% at 73.5GHz. The core area is only 0.1 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (0.31 mm×0.32 mm).

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