Design of Ka-Band Broadband High-Gain Power Amplifier in 65-Nm CMOS

Shaofei Wei,Chenxi Zhao,Yiming Yu,Huihua Liu,Yunqiu Wu,Kai Kang

DOI: https://doi.org/10.1109/icmmt58241.2023.10277179

2023-01-01

Abstract:In this paper, a wideband high-gain power amplifier in the Ka-band is designed in 65-nm CMOS process. The PA uses three-stage differential common-source amplifiers cascade structure based on neutralizing capacitors to improve the stability and gain. The PA uses transformers to match gain peak of each stage to different pole frequency which can improve the bandwidth. For the PA’s output matching network, the coupling coefficient (k) of the balun is determined from the no gain ripple condition. At 1.0 V supply voltage, the measured S-parameters show a −3-dB S21 bandwidth of 29.8-37.5 GHz, which is over 20% relative bandwidth. The measured small-signal gain is over 30 dB from 30 to 37 GHz with a peak gain of 31.3 dB at the center frequency of 33.65 GHz. The measured saturated output power (P sat ) is over 12 dBm without oscillation in the operating band. The measured output 1-dB compression point (P 1dB ) is 9.5 dBm. The chip area is 0.785 mm × 0.58 mm.