A two-way three-stage W-band power amplifier with series-parallel inductor-based T-type inter-stage matching network

Kenan Xie,Keping Wang,Hao Zhang
DOI: https://doi.org/10.1016/j.mejo.2023.105770
IF: 1.992
2023-05-01
Microelectronics Journal
Abstract:A two-way three-stage W-band power amplifier (PA) in 65 nm CMOS SOI process (Ft/Fmax: 120 GHz/220 GHz) is presented in this paper. A differential cascode structure with a series-parallel inductor-based T-type inter-stage matching network is proposed to improve efficiency and power gain near three quarters of Ft. A high passive efficiency transformer-based two-way parallel power combining output matching network is implemented to increase the output power and achieve compact layout. The proposed W-band PA achieves a post-layout simulated 22.1-dB small-signal power gain (S21) and 7.2-GHz 3-dB bandwidth from 90.9 to 98.1 GHz. The post-layout simulated large-signal performances of the PA shows it achieves 17.11 dBm saturated output power (Psat), 13.68 dBm output 1-dB compression point (OP1dB) and 11.15% peak power-added efficiency (PAE) at 94.5 GHz.
engineering, electrical & electronic,nanoscience & nanotechnology
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