Abstract:1T1R spin-transfer-torque (STT) MRAM is a promising candidate for next-generation high-density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from limited sensing margin and high write power. As shown in Fig. 30.2.1(a), sense amplifier design is challenging due to the small difference (only 2x) between the high-resistance state (R AP ) and the low-resistance state (R P ), as well as R AP degradation with increasing temperature. Moreover, R P and R AP resistance distributions shift with process variation, requiring a read reference (V ref ) that tracks process. To improve the sensing margin, several offset-cancellation methods have been reported to reduce sense amplifier mismatch [3]. However, these methods use multiple capacitors and hence incur significant area overheads. To address this issue, we propose an offset-cancelled sense amplifier that uses only a single capacitor to significantly improve the sensing margin by more than 60%. A second design challenge for STT-MRAM stems from the high current needed to flip a cell during a write operation. For non-volatile memory applications with a 10-year retention time requirement, the write current can be as high as several hundred μA. However, as shown in Fig. 30.2.1(b), the required write time varies with the state change required (0→1 or 1→0), process variation, and temperature. As a result, a fixed write time that ensures successful write for all conditions wastes a significant energy for typical or average conditions. We propose an in situ write-self-termination method to reduce write energy in most scenarios. The sense amplifier is reconfigured to continuously monitor the write operation and automatically shuts off the write drivers when the state transition is detected, without an area or timing penalty. In addition, dual dummy columns are added in each array to provide read V ref tracking of row-wise PVT variation. A 1Mb STT-MRAM was fabricated in 28nm technology, and achieves a 2.8ns read-access time at 25°C and 3.6ns at 120°C, respectively. With in-situ self-write-termination the write power is reduced by 47% with a 20ns write-access time at 25°C and by 60% at 120°C.

Reconfigured Self-Referenced MRAM Cell Supporting 2.527-Fj/bit Reading and in Situ Multiplication

Differential MRAM Sensing Scheme With Magnetoresistance Boosted 4T-2MTJ Bit-Cell

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

Interplay Bitwise Operation in Emerging MRAM for Efficient In-memory Computing

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance

A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination

Write-Efficient STT/SOT Hybrid Triple-Level Cell for High-Density MRAM

In-MRAM Computing Based on Complementary-Sensing Time-Based Readout Circuit Using Hybrid VGSOT-MTJ/GAA-CNTFET

A Novel Group-Division-Multiplexing Complementary Symmetric Reference Sensing Scheme for MRAM

3T2M Canted-Type X SOT-MRAM: Field-free, High-Energy-efficiency, and High-Read-margin Memory Toward Cache Applications

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

A 40nm 150 TOPS/W High Row-Parallel MRAM Compute-in-Memory Macro with Series 3T1MTJ Bitcell for MAC Operation

Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory.

Magnetic Random Access Memory (MRAM)

A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

Ultra-low Power Access Strategy for Process-Voltage-Temperature Aware STT-MRAM

Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM

High-density Magnetoresistive Random Access Memory Operating at Ultralow Voltage at Room Temperature

Robust magnetic full-adder with voltage sensing 2T/2MTJ cell

Design Techniques to Improve the Device Write Margin for MRAM-based Cache Memory

A High Throughput In-MRAM-Computing Scheme Using Hybrid P-Sot-mtj/gaa-cntfet