Abstract:This study introduces the utilization of an In2(O,S)3 buffer layer as a substitute for the traditional CdS buffer layer in antimony selenide (Sb2Se3) solar cells. This replacement aims to diminish interface recombination and increase the open-circuit voltage (Voc). The O/(S + O) ratios have a significant impact on both the optical bandgap of the In2(S1−xOx)3 buffer layer and the band alignment at the Sb2Se3/In2(O,S)3 junction. By adjusting the O/(S + O) ratio from 0 (for pure In2S3) to 0.14, the bandgap (Eg) of the In2(O,S)3 compound can be altered from 2.1 to 2.9 eV. The study found that at the interface of Sb2Se3/In2(O,S)3, an optimal conduction band offset can be achieved with a small increase in oxygen content (x ∼ 0.1) in the In2(S1−xOx)3 buffer layer. A higher bandgap of In2(S1−xOx)3 (x = 0.1) than CdS increases the external quantum efficiency (EQE) at short wavelengths (400 < λ < 500 nm). The reduction of interface recombination was achieved by modifying the band alignment through the implementation of the In2(S1−xOx)3 buffer layer. By taking advantage of the proposed buffer, the saturation current density (J0) is minimized, and the activation energy approaches the Eg of the Sb2Se3 absorber layer. This indicates that the interface recombination is at its lowest level. The proposed Sb2Se3/In2(S1−xOx)3 cell demonstrated superior recombination resistance in comparison to the Sb2Se3/CdS cell, as revealed by the analysis of electrochemical impedance spectroscopy. The Sb2Se3 cell achieved an efficiency of 15.05% with an optimal energy band alignment, resulting in a remarkable 5.85% increase in efficiency compared to the conventional Sb2Se3/CdS cell.

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