Abstract:This work reports a study of how to activate the stochasticity/memristivity in a spin‐orbit torque device composed of a heavy‐metal/ferromagnet/antiferromagnet trilayer. Via tailoring the antiferromagnetic order on the presence of exchange bias, the strength of Dzyaloshinskii–Moriya interaction in the trilayer can be manipulated to behave as either a stochastic cell for physically unclonable function or a memristive cell for neuromorphic computing. Antiferromagnet (AFM) has currently participated in the spin‐orbit torque (SOT) technology due to its great potential to be applied to the field‐free SOT switching and to promote the thermal stability of MRAM. However, the effect of varying AFM ordering on the SOT switching and the associated properties is still not comprehensively understood. This work reports how an AFM ordering modifies the strength of Dzyaloshinskii–Moriya‐interaction (DMI) in a heavy metal (Pt)/FM (Co)/AFM (IrMn) trilayer and its effects on SOT switching. Increasing the AFM ordering reflects the enhanced exchange bias through increasing IrMn thickness appears to significantly reduce the DMI strength of the trilayer. Controlling the IrMn thickness appears to serve as a unique switch to activate memristivity/stochasticity in the devices via tailoring AFM ordering on exchange bias: The strong AFM ordering via increasing IrMn thickness enables to increase the stability of multi‐levels for SOT switching, which promotes the memristivity for neuromorphic application. On the contrary, the weak AFM ordering via reducing IrMn thickness will lead to significant stochasticity for the physically unclonable functionality. This work demonstrates an intrinsic tuning over the AFM ordering will serve as a switch to turn the SOT device into a stochastic/memristive cell to bridge probabilistic and neuromorphic computing.

Magnetization Switching in Atom-Thick Mo Engineered Exchange Bias-Based SOT-MRAM

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source (Adv. Electron. Mater. 4/2024)

Threshold current of field-free perpendicular magnetization switching using anomalous spin-orbit torque

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Mo-based perpendicularly magnetized thin films with low damping for fast and low-power consumption magnetic memory

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Interface Engineering Via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory

Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75

Field-free magnetization switching through modulation of zero-field spin–orbit torque efficacy

All-electrical manipulation of magnetization in magnetic tunnel junction via spin–orbit torque

Strain-mediated spin-orbit torque switching for magnetic memory

Ultrafast Field-Free Magnetization Switching Using Bi-Directional Spin Hall Current and Antiferromagnetic Interlayer Exchange

A Spin‐Orbit Torque Switch at Ferromagnet/Antiferromagnet Interface Toward Stochastic or Memristive Applications via Tailoring Antiferromagnetic Ordering