Abstract:A comprehensive quantum transport study of ultrathin-body silicon double-gate pMOSFETs with gate length <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {14}$ </tex-math></inline-formula>, 10, and 7 nm is performed by in-house developed nonequilibrium Green’s function solver employing the six-band <inline-formula> <tex-math notation="LaTeX">${k} \cdot {p}$ </tex-math></inline-formula> Hamiltonian. The effects of channel length, body thickness, as well as confinement and transport crystal orientations are studied systematically. Both <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> characteristics are analyzed in this paper. Furthermore, the CMOS performance benchmarking results, such as switching delay, energy consumption, and their product, are calculated with the influence of parasitic resistances and capacitances treated in an appropriate way. It is found that the crystal orientation effect on drive current is significant at both long and short channel lengths, while its effect on effective capacitance is more observable at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm. The drive current at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {14}$ </tex-math></inline-formula> nm and <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm can be well explained by average ballistic hole velocity and source-to-drain tunneling ratio, respectively. Meanwhile, the effective capacitance is not only determined by the density of states but also affected by the distribution of holes in the confined direction. Both intrinsic and extrinsic performance assessments suggest that (001)/[100] and (110)/[001] are the optimal confinement/transport crystal orientation configurations at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {7}$ </tex-math></inline-formula> nm, while <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110}{)}/[\overline {1}\textsf {10}]$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110})/[\overline {1}\textsf {11}]$ </tex-math></inline-formula> are the best choices at longer gate lengths. As <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}$ </tex-math></inline-formula> shrinks, both intrinsic and extrinsic performances will be better at a scaled body thickness.

Higher NMOS Single Event Transient Susceptibility Compared to PMOS in Sub-20nm Bulk FinFET

Research on Single-Event Transient Mechanism in a Novel SOI CMOS Technology.

Study on Single Event Transient Pulse Characteristics of 16nm SOI FinFET Devices

A Study of PN Junction Diffusion Capacitance of MOSFET in Presence of Single Event Transient

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

Improved Single-Event Transient Hardness in Tunnel-Diode Body-Contact SOI Nmos

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Two-dimensional Numerical Analysis of the Collection Mechanism of Single Event Transient Current in NMOSFET

Investigation On Impact Of Fin Width On Single-Event-Transient In Bulk And Soi Finfets

Supply Voltage and Temperature Dependence of Single-Event Transient in 28-Nm FDSOI MOSFETs

Impact of Tap Cell on Single Event Transient in 28-Nm CMOS Technology

Strategy to Mitigate Single Event Upset in 14-Nm CMOS Bulk FinFET Technology

Characterization of Single-Event Transients Induced by High LET Heavy Ions in 16 Nm Bulk FinFET Inverter Chains

A Comprehensive Review of Single Event Transients on Various MOS Devices

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs

FOI FinFET with Ultra-Low Parasitic Resistance Enabled by Fully Metallic Source and Drain Formation on Isolated Bulk-Fin

Collection of Charge in NMOS from Single Event Effect.

LET-dependent model of single-event effects in MOSFETs

Single Event Upset Sensitivity of 45 Nm FDSOI and SOI FinFET SRAM

Examining the Role of Tap Cell in Suppressing Single Event Transient Effect in 28-Nm CMOS Technology