Magnetotransport, Spin Reorientation, and Anomalous Ferrimagnetic-to-antiferromagnetic Phase Transition in Epitaxial Mn2Sb Alloy Thin Films

Ting-Wei Chen,Shiqi Liu,Ying Zhang,Fang Tang,Jing-Shi Ying,Shuang-Shuang Li,Lei Chen,Fu-Sheng Luo,Shu-Juan Zhang,Yong Fang,Shanming Ke,Weiyao Zhao,Ren-Kui Zheng

DOI: https://doi.org/10.1016/j.actamat.2023.119257

IF: 9.4

2023-01-01

Acta Materialia

Abstract:High-quality ferrimagnetic Mn2Sb epitaxial thin films have been successfully grown on SrTiO3 (001) singlecrystal substrates via systematically optimizing the growth parameters using molecular beam epitaxy. Magnetotransport and magnetic measurements reveal that a spin reorientation transition occurs in the 260-150 K region where the direction of spins rotates from out-of-plane to in-plane upon cooling, resulting in the ferrimagnetic(II) phase, followed by a giant magnetoresistance associated anomalous ferrimagnetic(II)-to-canted antiferromagnetic (c-AFM) phase transition in the 150-115 K region, resulting in the c-AFM ground state, both of which are completely absent and have yet not been previously observed in Mn2Sb bulk and thin films. Temperature-dependent X-ray diffraction measurements reveal that the low-temperature c-AFM phase originates from the contraction of the out-of-plane lattice constant c, which would increase the exchange interaction between neighbouring magnetic sublattices and thus stabilize the c-AFM phase. DFT calculations reveal that substrate clamping is the cause of the unique c-axis contraction in Mn2Sb films. For the 24-nm films, there is almost no out-of-plane magnetization in the ground state, but exists a weak in-plane remanent magnetization (-0.4 & mu;B/f.u.) and anomalous Hall effects, implying spin canting within the ab plane. With decreasing film thickness from 64 to 8 nm, the out-of-plane saturation magnetization at 10 K increases by approximately 10 times, and for the 8-nm film, its saturation magnetization (4.8 & mu;B/f.u.) is 2.8 times larger than that of Mn2Sb bulk (-1.74 & mu;B/f.u.), both of which are attributed to the interfacial strain effect. Our work demonstrates that Mn2Sb films grown on perovskite oxide substrates show anomalous spin-charge-lattice coupling phenomena, which may inspire more study of its basic properties and potential device applications.