Quantum transport simulations of a two-dimensional SnSe ferroelectric semiconductor junction

Guoxue Yin,Ying Guo,Yunzhe Ke,Lingxue Zhang,Jiaxin Zhang,Ruge Quhe

DOI: https://doi.org/10.1016/j.physe.2023.115814

2023-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:Two-dimensional SnSe layers are considered potential candidates for next-generation storage and computing devices due to their semiconducting feature and nonvolatile ferroelectricity. Based on first-principles calculations, we designed a two-dimensional ferroelectric semiconductor junction with SnSe as the channel and graphene as the electrodes. The in-plane ferroelectricity of SnSe makes the electronic structure of the SnSe-graphene interface direction dependent, and the corresponding device exhibits an asymmetric output characteristic curve at positive and negative biases. The device shows current densities of 248 A/m and 10 A/m at applied bias voltages of -0.9 V and +0.9 V, respectively. By manipulating the in-plane polarization of the SnSe channel, the computational unit consisting of two SnSe ferroelectric memristors can realize different logic computational functions, such as OR, NAND, and XNOR. Our study provides new ideas for the integration of storage and computational functions using two-dimensional ferroelectric semiconductors.