NiO Thin Film with an Extremely High Index (7 1 4) on R-Plane Sapphire Substrate

Xiang Ding,C. I. Sathish,Jiangtao Qu,Rongkun Zheng,Xun Geng,Xinwei Guan,Xiaojiang Yu,Mark B. H. Breese,Liang Qiao,Kiyonori Suzuki,Jiabao Yi
DOI: https://doi.org/10.1007/s42247-023-00543-7
2023-01-01
Emergent Materials
Abstract:Thin film epitaxy is essential for state-of-the-art semiconductor applications. The combination of different substrates and deposition methods leads to various crystallographic orientation relationships between thin films and substrates, which have a decisive impact on thin film performance. By utilizing pulsed laser deposition, we discovered a very high-index (7 1 4) –oriented NiO thin film when deposited on r-plane (1012) sapphire substrates. The in-plane epitaxial relations are [131 ]_NiO||[1210]_Sapphire and [1 12]_NiO||[1011]_Sapphire , and the lattice mismatch is 3.2 (7 1 4) show different behaviors, which may be associated with the spin density and alignment on the surface.
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