Abstract:We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site Hubbard $U$. To model doping effects, we have adopted the supercell approach that allows for a realistic treatment of structural relaxations and electronic effects beyond a purely rigid band approach. By means of the band unfolding technique we have computed the spectral function and constructed the effective band structure and Fermi surface (FS), which are readily comparable with available experimental data. Our calculations clearly indicate that La and Rh doping can be interpreted as effective electron and (fractional) hole doping, respectively. In Sr$_{2-x}$La$_x$IrO$_4$ the IMT is accompanied by a moderate renormalization of the electronic correlation substantiated by a reduction of the effective on-site Coulomb repulsion $U-J$ from 1.6 eV ($x=0$) to 1.4 eV (metallic regime $x=12.5\%$). The progressive closing of the relativistic Mott gap leads to the emergence of connected elliptical electron pockets at ($\pi$/2,$\pi$/2) and less intense features at $X$ in the FS. The substitution of Ir with the nominally isovalent Rh is accompanied by a substantial hole transfer from the Rh site to the nearest neighbor Ir sites. This shifts down the chemical potential, creates almost circular disconnected hole pockets in the FS and establishes the emergence of a two-dimensional metallic state formed by conducting Rh-planes intercalated by insulating Ir-planes. Finally, our data indicate that hole doping causes a flipping of the in-plane net ferromagnetic moment in the Rh plane and induces a magnetic transition from the AF-I to the AF-II ordering.

Single Crystal Growth and Electronic Structure of Rh-doped Sr3Ir2O7

Electron and hole doping in the relativistic Mott insulator Sr$_2$IrO$_4$: a first-principles study using band unfolding technique

Charge partitioning and anomalous hole doping in Rh-doped Sr2IrO4

Electronic Phase Separation in the Doped Spin-Orbit Driven Mott Phase of Sr3(Ir1-xRux)2O7

Interface-engineered Hole Doping in Sr2IrO4/LaNiO3 Heterostructure

Spin-Orbit Tuned Metal-Insulator Transitions In Single-Crystal Sr2ir1-Xrhxo4 (0 <= X <= 1)

Interface doping and the effect of strain and oxygen stoichiometry on the transport and electronic structure properties of SrIrO$_3$ heterostructures

Magnetic excitations in hole-doped Sr2IrO4: A comparison with electron-doped cuprates

Mott gap engineering in Sr 2 IrO 4 /SrTiO 3 superlattices

Optical Signature of a Crossover from Mott- to Slater-Type Gap in Sr_{2}Ir_{1-x}Rh_{x}O_{4}

Tuning Transport Properties Via Rare-Earth Doping and Epitaxial Strain in Sr2IrO4 Thin Films

Evolution of electronic structure of Ru-doped single-crystal iridiates, Sr$_2$Ir$_{1-x}$Ru$_x$O$_4$

La-Doping Effect on Spin-Orbit Coupled Sr2iro4 Probed by X-Ray Absorption Spectroscopy

Crystal Structure and Physical Properties of the Sr-Vacant Spin-Orbit-Coupling Induced Mott Insulator Sr2-Xiro4

Synthesis and electronic properties of Ruddlesden-Popper strontium iridate epitaxial thin films stabilized by control of growth kinetics

Simultaneous Metal-Insulator and Antiferromagnetic Transitions in Orthorhombic Perovskite Iridate Sr0.94Ir0.78O2.68 Single Crystals

Growth of High Quality Sr2IrO4 Epitaxial Thin Films on Conductive Substrates

Enhanced Electrical Conductivity and Diluted Ir4+ Spin Orders in Electron Doped Iridates Sr2–xGaxIrO4

Manipulate the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Microscopic and Spectroscopic Evidence for a Slater Metal-Insulator Transition in Sr2IrO4

Exploration of the bond angle and charge carrier density by rare-earth doping in Sr 2 IrO 4