Mott gap engineering in Sr 2 IrO 4 /SrTiO 3 superlattices

Xin Liu,Yuben Yang,Qinghua Zhang,Dayu Yan,Jingdi Lu,Rongyan Chen,Youguo Shi,Changmin Xiong,Fa Wang,Lin Gu,Jinxing Zhang
DOI: https://doi.org/10.1007/s40843-020-1315-8
2020-01-01
Abstract:In recent years, iridium oxides have attracted intensive research interests both in experiments and theories due to their comparable energy scales of the Coulomb repulsion and strong spin-orbit coupling (SOC)[1, 2], where a plenty of novel quantum states such as Weyl semimetal, topological insulator and quantum spin liquid have been studied [3–7]. Among the iridates, the layered-perovskite Sr2IrO4 (SIO) is a Jeff= 1/2 Mott insulating antiferromagnet caused by the interplay of the SOC and electronic correlations [8, 9]. The crystal and electronic structures of SIO are similar to the high-temperature superconductor La2CuO4, which gives a prospect of a new possible hightemperature superconductor [6, 10]. In order to control its band structure, many efforts have been made to explore and engineer the electronic structures of SIO. Elemental substitution or chemical doping is always the popular way to tune the electronic …
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