Crystal Structure and Physical Properties of the Sr-Vacant Spin-Orbit-Coupling Induced Mott Insulator Sr2-Xiro4

Jimei Kong,S. L. Liu,Jie Cheng,Haiyun Wang,Xing'ao Li,Z. H. Wang
DOI: https://doi.org/10.1016/j.ssc.2015.07.005
IF: 1.934
2015-01-01
Solid State Communications
Abstract:A series of polycrystalline samples of Sr2−xIrO4 (0≤x≤0.3) have been synthesized by a solid-state reaction method. The crystal structure of this doped system can be explained on the basis of the extended nature of 5d electrons and strontium vacancies in Sr2−xIrO4. The analysis of the temperature-dependent resistance of these samples reveals the semiconducting feature, in which the three-dimensional variable range hopping (3D-VRH) behavior is observed at temperatures lower than 120K, the Arrhenius type in intermediate temperatures from 140K to 200K, and the two-dimensional (2D) weak-localization at high temperatures from 220K to 300K. Correspondingly, temperature-dependent magnetic properties in the range of x≤0.30 can be described by the antiferromagnetically ordered spin system.
What problem does this paper attempt to address?