Non-monotonic effect of the electronic transport and magnetic properties in a Sm-doped Sr2−x SmxIrO4system

Chaomin Zhu,Shengli Liu,Jie Cheng,Bin Li,Peng Dong,Zhihe Wang
DOI: https://doi.org/10.1209/0295-5075/124/17004
2018-01-01
Abstract:Sr2IrO4 has been shown to host a novel J(eff) = 1/2 Mott spin-orbit insulating state with antiferromagnetic ordering. Here, the effects of Sm substitution at Sr-site on structural, electrical and magnetic properties are studied in Sr2IrO4 . Sm-doped samples still retain the insulating behavior, but with the increase of Srn-doping concentration x, the resistivity firstly decreases for x <= 0.1 and then increases. We found that the increment of the Ir-O-Ir bond angle, combined with the modulation of the regularity of IrO6 octahedra, results in the nonmonotonic variation of resistivity with x. On the other hand, there are two types of magnetic exchange interactions (i. e., Ir4+-O-Ir(4+)and Sm3+-O-Ir4+) in the Sm-doped Sr2-x SmxIrO4 system. The antiferromagnetic component is greatly suppressed in the low concentration x and then an ascension emerges in the high concentration x, which is attributable to the competition between the weakened Ir4+-O-Ir4+ and enhanced Sm3+-O-Ir-4(+) exchange interactions. Copyright (C) EPLA, 2018
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