Exploration of the bond angle and charge carrier density by rare-earth doping in Sr 2 IrO 4

Hui Huang,Ping Ji,Yu Xie,Hui Han,Binghui Ge
DOI: https://doi.org/10.1103/physrevmaterials.4.115001
IF: 3.98
2020-11-16
Physical Review Materials
Abstract:Doping at the Sr site in Sr2IrO4 is predicted to be a possible route to high-temperature superconductivity, which has not yet been experimentally achieved. We have made a comprehensive investigation on the interplay among the Ir-O-Ir bond angle, carrier density, and magnetic and transport properties of rare-earth-doped Sr2IrO4 by choosing Pr and Ce as the dopants. We find that compared with Pr doping, Ce doping introduces more effective charge carriers into the Sr2IrO4 matrix, leading to a more rapid suppression of its magnetic ordering. A metallic-like behavior has been observed in heavily Ce-doped samples. The evolutions of magnetic and transport behaviors are found to be less relevant to the distorted Ir-O-Ir bond angle. The present results suggest that the charge carrier density could be a crucial factor in determining the physical properties of rare-earth-doped Sr2IrO4 compounds.
materials science, multidisciplinary
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