A ferroelectric fin diode for robust non-volatile memory
Guangdi Feng,Qiuxiang Zhu,Xuefeng Liu,Luqiu Chen,Xiaoming Zhao,Jianquan Liu,Shaobing Xiong,Kexiang Shan,Zhenzhong Yang,Qinye Bao,Fangyu Yue,Hui Peng,Rong Huang,Xiaodong Tang,Jie Jiang,Wei Tang,Xiaojun Guo,Jianlu Wang,Anquan Jiang,Brahim Dkhil,Bobo Tian,Junhao Chu,Chungang Duan
DOI: https://doi.org/10.1038/s41467-024-44759-5
IF: 16.6
2024-01-13
Nature Communications
Abstract:Abstract Among today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms. Here, a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes is designed. Such a device not only shows both digital and analog memory functionalities but is also robust and universal as it works using two very different ferroelectric materials. When compared to all current nonvolatile memories, it cumulatively demonstrates an endurance up to 10 10 cycles, an ON/OFF ratio of ~10 2 , a feature size of 30 nm, an operating energy of ~20 fJ and an operation speed of 100 ns. Beyond these superior performances, the simple two-terminal structure and their self-rectifying ratio of ~ 10 4 permit to consider them as new electronic building blocks for designing passive crossbar arrays which are crucial for the future in-memory computing.
multidisciplinary sciences