Abstract:Capacitors, as the basic building block of power electronics and electrical systems, are the major constraint of the increasingly integrated power systems that require new capable polymer dielectric films operating at higher temperatures >125 °C. Despite tremendous research efforts on the lab scale, there remains a considerable barrier and knowledge basis for converting polymeric films to functioning capacitors desired in actual applications. The authors tackled the polyetherimide (PEI) film scale up issues and developed various engineering processes for film de-wrinkling, optimal metallization, static elimination, and capacitor fabrication improvement. The authors discovered various fabrication challenges such as the electrostatic charge, metallization scheme, winding tension, and end electrode disconnects. To fabricate a high yield of PEI capacitor bobbins, it is necessary to utilize static eliminators (radioactive ionizers), moderately thick aluminum metallization (15–30 Ω/sq), and winding tension (60–100 g). It is also effective to evaluate capacitance, dielectric loss, equivalent series resistance, and thermal cycling stability of capacitors. This work sheds some light on converting PEI films and other polymeric films to capacitors on a scale up fabrication effort. The practical learning from film handling to capacitor fabrication in this work provided the necessary knowledge for manufacturing high-temperature polar film capacitors.

Investigation of Inorganic Integrated Film Capacitor Fabrication

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Demonstration and Characterization of 500 V MIM Capacitor with Al2O3 Dielectric Layer for Power Integrated Circuits

Fabrication and properties of silicon nitride thin film MIM capacitor

Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing

Atomic-layer-deposited Al2O3-HfO2 Laminated and Sandwiched Dielectrics for Metal–insulator–metal Capacitors

Fabrication and Characteristics of Aluminum Oxide MIM Capacitors with Interconnections Using BCB-based MEMs Technology

High Density Al2O3/TaN-based Metal–insulator–metal Capacitors in Application to Radio Frequency Integrated Circuits

Influence of inner electrode on the microstructure of BZN based MLC

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

Study of a Mixed Conductive Layer Fabricated by Ion Implantation and Distribution Theory

High-Performance MIM Capacitors for a Secondary Power Supply Application

A case study of high-temperature polyetherimide film capacitor fabrication

Characteristics of Pt/BiFeO3/TiO2/Si Capacitors with TiO2 Layer Formed by Liquid-Delivery Metal Organic Chemical Vapor Deposition

MOS Capacitor Characteristics of 3C-Sic Films Deposited on Si Substrates at 1270°C

Fabrication and Characterization of Embedded Capacitors Based on Novel Nanocomposite As Dielectric Materials

Investigation of thermal effect on electrical properties of Si0.887Ge0.113 and Si0.887−yGe0.113Cy films

I-V Characteristics of High Dielectric Constant Tantalum Oxide Films

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited Hfo2 Dielectrics for Radio Frequency Integrated Circuit Application

Polymer dielectric films exhibiting superior high-temperature capacitive performance by utilizing an inorganic insulation interlayer

Investigation of PVD HfO/sub 2/MIM Capacitors for SiRf and Mixed Signal ICs Application