A Charge Pump Circuit Design Based on a 0.35μm BCD Technology for High Voltage Driver Applications

Hongxia Wei,Yuhua Cheng
DOI: https://doi.org/10.1109/icsict.2008.4734966
2008-01-01
Abstract:A symmetrical charge pump circuit for DC-DC converters is presented in this paper. With a typical +12 V input achieved by high-voltage CMOS devices, the charge pump circuit can generate an output voltage higher than +30 V. The circuit is designed based on ASMC 0.35 μm BCD technology. The results show that the designed pumping circuit can drive a large current more efficiently, and the ripple voltage of the output is lower with two anti-phase clocks. This circuit can be used in many high voltage driver applications.
What problem does this paper attempt to address?