A Charge Pump Circuit Design Based on A 0.35um Bcd Technology for High Voltage Driver Applications

Henru Wei,Yuhua Cheng
2008-01-01
Abstract:A symmetrical charge pump circuit for DC-DC converters is presented in this paper. With a typical +12V input achieved by high-voltage CMOS devices, the charge pump circuit can generate an output voltage higher than +30V The circuit is designed based on ASMC 0.35um BCD Technology. The results show that the designed pumping circuit can drive a large current more efficiently, and the ripple voltage of the output is lower with two anti-phase clocks. This circuit can be used in many high voltage driver applications.
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