Abstract:The realization of high-performance two-dimensional (2D) solar photovoltaic systems are both fundamentally intriguing and practically appealing to meet the fast-growing energy requirements. Since the limited application of single 2D crystals in photovoltaic, here we propose a family of 2D KAgSe/KAgX(X=S,Te) van der Waals heterostructures (vdWHs), which are constructed by combining two different KAgX layers through interlayer vdW interaction. After a systematic study and further regulatory research of these vdWHs based on the first-principles, numerous fascinating characteristics and physical mechanisms are obtained. Firstly, favorable potential applications of these vdWHs in photovoltaics are confirmed in virtue of their desirable optoelectronic properties, such as the robust stabilitis, moderate direct band gaps, type-II band alignments together with superior carrier mobilities, visible optical absorptions, power conversion efficiencys (PCEs) and photocurrents in their based photovoltaic devices. More importantly, when under varying vertical electric field Ez, a phase transition of band alignment from type-II to type-I of these vdWHs can be induced by the opposite band shifts between layers, which may enrich their applications in light-emitting diodes and lasers. Meanwhile, the PCE can be expanded up to 23%, and an obvious red-shift peak of the photocurrent in the visible light range are also obtained at different Ez. These fascinating tunable properties of KAgSe/KAgX vdWHs under varying Ez not only promote the improvement of their photoelectric performances, but the underlying mechanisms can also be applied to next experimental design and practical application of other 2D photovoltaic systems. Especially for the red-shift peak of the photocurrent, which is rarely found but highly desirable in practical visible photoelectric conversion.

Out-of-plane Polarization Modulated Band Alignments Inβ-In2x3/α-in2x3(x = S and Se) Vdw Heterostructures.

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Tunable Band Alignments in 2D Ferroelectric alpha-In2Se3 Based Van der Waals Heterostructures

Effects of composition modulation on the type of band alignments for Pd2Se3/CsSnBr3 van der waals heterostructure: A transition from type I to type II

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures

In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments

Ferroelectric Control of Band Alignments in In2Se3/h‐BN and CuInP2S6/h‐BN Van der Waals Heterostructures

Unveiling the photoelectric and photocatalytic promise of two-dimensional lead-free perovskite/InX (X=Se, Te) van der Waals heterostructures

Type-II Lateral Heterostructures of Monolayer Halide Double Perovskites for Optoelectronic Applications

Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In2Se3/ReS2 Van Der Waals Heterostructure

2D anisotropic type-I SiS vdW heterostructures toward infrared polarized optoelectronics applications

Two-Dimensional Ferroelectric C2N/In2Se3 Heterobilayer with Tunable Electronic Property and Photovoltaic Effect

Two-Dimensional Lateral Multiheterostructures Possessing Tunable Band Alignments

Band Alignment Engineering in Two-Dimensional Lateral Heterostructures

Electronic structures and photovoltaic applications of vdW heterostructures based on Janus group-IV monochalcogenides: insights from first-principles calculations

Band alignment of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 van der Waals heterostructures for highly enhanced photoelectric responses

Design and manipulation of high-performance photovoltaic systems based on two-dimensional novel KAgSe/KAgX(X=S,Te) van der Waals heterojunctions

Bandstructure Engineering in 2D Materials Using Ferroelectric Materials

Two-Dimensional N-Inse/P-Gese(Sns) Van Derwaals Heterojunctions: High Carrier Mobility And Broadband Performance