Abstract:To gain higher efficiency than that of traditional lattice-matched solar cells, newly designed up-grown metamorphic (UMM) InGaP/InGaAs/Ge solar cells were grown on Ge substrates. The defects in UMM InGaP/InGaAs/Ge can be perfectly controlled, and thus the conversion efficiency exceeds 30%. Similarly, the radiation environment in space could also cause displacement damage in UMM solar cells, causing the degradation of electrical properties. Proton irradiation at 50 keV and 150 keV was tested on the UMM solar cells. Because the top InGaP layer is thick enough, the radiation defects are limited within the top subcell without affecting the underlying subcells. In this research, 50-keV protons cause more serious degradation of short-circuit current, whereas 150-keV protons cause more serious degradation of open-circuit voltage. The difference may be related to the distribution of defects, which is calculated by The Stopping and Range of Ions in Matter (SRIM). Defects in the junction region would cause the decrease in voltage, whereas defects in the surface region could cause degradation of current. As a comparison, lattice-matched GaInP/GaAs/Ge solar cells were also irradiated by low energy protons. The degradation under 150-keV protons is more serious because the damage peak lies in the middle GaAs layer, which has poor radiation resistance. The degradation under 70-keV proton irradiation proves that a thinner GaInP layer improves the radiation resistance. It is notable that the degradation of short-circuit current and maximum power is influenced by the equivalent displacement damage dose (DDD), but this is not accurate for open-circuit voltage. The artifact signals at 700-750 nm after 50-keV proton irradiation indicate the decrease in shunt resistance of the InGaP subcell during proton irradiation.

Displacement Damage Equivalence of Neutron and Proton Radiations in Triple-Junction GaInP/GaAs/Ge Solar Cells

Application of Displacement Damage Dose Approach to Low-Energy Proton Irradiated GaInP/GaAs/Ge Solar Cells

Proton Radiation Effect on InGaN/GaN Multiple Quantum Wells Solar Cell

A study on the electric properties of single-junction GaAs solar cells under the combined radiation of low-energy protons and electrons

Degradation of Up-Grown Metamorphic InGaP/InGaAs/Ge Solar Cells by Low-Energy Proton Irradiation

Radiation Damage of Space GaAs/Ge Solar Cells Evaluated by Displacement Damage Dose

Degradation Behaviors of Electrical Properties of GaInP/GaAs/Ge Solar Cells under <200kev Proton Irradiation

EVALUATION OF ORBITAL BEHAVIORS OF NATIONAL GaAs/Ge SOLAR CELLS

Degradation Analyses of GaInP/GaAs/Ge Solar Cells Irradiated by 70 Kev and 150 Kev Protons by Current-Voltage Curves under Various Intensities of Light

Ab initio electronic stopping power for protons in Ga$_{0.5}$In$_{0.5}$P/GaAs/Ge triple-junction solar cells for space applications

Effects of neutron radiation on the key component cells of upright metamorphic four-junction (UMM4J) solar cells

NIEL Dose Dependence for Solar Cells Irradiated with Electrons and Protons

Proton irradiation effects on GaInP/GaAs/Ge triple junction cells

50--170 Kev Proton Irradiation on Spectral Response in GaAs/Ge Space Solar Cell

Impedance Spectroscopy Characterization of Proton-Irradiated GaInP/GaAs/Ge Triple-Junction Solar Cells

High Energy Proton Radiation Effect on Flexible Thin-film Inverted Metamorphic Triple-junction Solar Cell

Displacement Damage dose and DLTS Analyses on Triple and Single Junction solar cells irradiated with electrons and protons

Effects of proton radiation on the InGaAs component cells of inverted metamorphic four-junction solar cells

Displacement Damage Equivalence for Proton in InGaAsP Device

A study on the degradation of GaAs/Ge solar cells irradiated by <200keV protons

Simulation of high energy electron damage of triple junction solar cell