Abstract:Indium phosphide (InP) material has the advantages of large band gap, high electron mobility, high photoelectric conversion efficiency, high temperature resistance, radiation resistance better than silicon (Si), gallium arsenide (GaAs). Meanwhile InP is widely used in optical communications, high-frequency millimeter waves, optoelectronic integrated circuits, satellite communications, space solar cells and other fields. Radiation particles incident in InP devices to produce displacement atoms through elastic process. And these displacement atoms continue cascade collisions to generate lattice defects which are vacancies, interstitials and clusters. These defects capture electrons-holes by introducing defective energy levels in the energy band. And then they resulting in a decrease in the life of minority carriers which is the reason of degradation of InP devices. The process of degradation of InP devices induced by lattice defects from ion-irradiation is called displacement damage effect (DDE). The non-ionizing loss energy (NIEL) scaling is a useful method to predict the degradation of devices caused by DDE of radiation particles. Abundant studies have shown that NIEL is linearly related to the damage coefficient of InP devices. Previous study of radiation damage effect of InP devices are mainly focused on single-energy protons, electrons, and neutrons. Low Earth Orbit (LEO) consists of most protons and a little of α and electrons while the electrons NIEL is too small and its DDE is negligible. The InP NIEL induced by proton and α energy spectrum in LEO has not been studied in detail. Therefore, this paper uses Monte Carlo software Geant4 to study the non-ionizing loss energy (NIEL), damage energy distribution with depth and annual total non-ionization loss energy generated by protons and α particles in LEO in 500/1000/5000 μm InP materials. The shielding of 150 μm SiO 2 and 2.54 mm Al for proton and α are considered as InP solar cell and InP devices in spacecraft respectively. We found that the energy spectrum determines the non-ionizing damage energy T_"dam" distribution, and then influence the NIEL value which increase with the increase of T_"dam" and the decrease of InP materials thickness. And α NIEL is larger than proton, the single particle DDE of InP devices induced by α should be focused. The annual non-ionizing damage energy of proton accounts for 98%, which means proton is the main factor of the degradation of InP devices in LEO.

Application of Displacement Damage Dose Approach to Low-Energy Proton Irradiated GaInP/GaAs/Ge Solar Cells

Theoretical Analysis on GaAs Sub-Cell Doping Concentration for Triple-Junction Solar Cells Irradiated by Proton Based on TCAD Simulation

Displacement Damage dose and DLTS Analyses on Triple and Single Junction solar cells irradiated with electrons and protons

Proton irradiation effects on GaInP/GaAs/Ge triple junction cells

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Ab initio electronic stopping power for protons in Ga$_{0.5}$In$_{0.5}$P/GaAs/Ge triple-junction solar cells for space applications

Simulation of proton-induced primary displacement damage in GaAs under different ambient temperatures

Displacement Damage Equivalence for Proton in InGaAsP Device

Investigation of degradation characteristics of electron irradiated GaInP/InGaAs/Ge solar cell by numerical simulation model

Effects of electron radiation on shielded space triple-junction GaAs solar cells

Displacement damage simulation of InP induced by proton and α in Low Earth Orbit

NIEL DOSE and DLTS Analyses on Triple and Single Junction solar cells irradiated with electrons and protons

NIEL Dose Dependence for Solar Cells Irradiated with Electrons and Protons

Simulation of irradiation damage in CsPbI3-based perovskite solar cells by energetic protons

Effects of proton radiation on the InGaAs component cells of inverted metamorphic four-junction solar cells

Simulation of Displacement Damage Induced by Protons Incident on AlxGa1-xN Materials

Simulation study of displacement damage induced by protons in Al x Ga 1 − x N materials

1 MeV electron irradiation effect and damage mechanism analysis of flexible GaInP/GaAs/InGaAs solar cells

Atomistic simulation of displacement damage and effective nonionizing energy loss in InAs

SRIM simulation of irradiation damage by protons in InAs/GaSb type-II superlattices

Geant4 simulation of neutron displacement damage effect in InP