Abstract:The performance and loss mechanism of Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells upon proton radiation exposure is presented. The Cd/S elements diffusion in CdS/CZTSSe heterojunction interface and Na redistribution in the whole device are the main origins that directly affect the performance of the CZTSSe solar cells. Additionally, the results also suggest that CZTSSe thin film solar cells have the desirable potential for space applications. Aiming at the current bottleneck of Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells, an experimental analysis of the performance and loss mechanism of CZTSSe thin film solar cells upon proton radiation exposure is presented. In order to deduce the important cell parameters, the environment of the cells is simulated by subjecting the devices to 200 keV proton irradiation with fluences from 1 × 1010 to 1 × 1017 cm‐2. It is found that the damage constants are sensitive to the elemental diffusion at heterojunction and Na redistribution in device. The incidence of the proton can lead to bandgap, tails fluctuations, and Urbach energy changes in the cells those directly impact defects and structural disorder in CZTSSe material thereby the device performance. The time‐resolved photoluminescence results show that the carrier lifetime is also very sensitive to the distribution of interface elements, especially Na, Cd, and S. These findings may provide new ideas for solving the VOC deficit of CZTSSe solar cells. From this work, it can be also suggested that the CZTSSe thin film solar cells are robust to proton irradiation and have the potential for future space applications.

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