Reinforcing Bond Covalency for High Thermoelectric Performance in Cu 3 SbSe 4 -Based Thermoelectric Material

Dan Zhang,Ruiqi Zhong,Shikang Gao,Lei Yang,Fang Xu,Ping He,Guannan Liu,Xingyuan San,Junyou Yang,Yubo Luo,Shufang Wang

DOI: https://doi.org/10.1007/s40843-023-2498-y

2023-01-01

Science China Materials

Abstract:Here, an effective strategy for weakening electron-phonon coupling to achieve high mobility is proposed and demonstrated to enhance the thermoelectric properties by increasing bond covalency in Cu 3 SbSe 4 -MTe (M = Ge/Sn) solid solution systems. We find that GeTe-alloyed Cu 3 SbSe 4 samples possess a higher mobility at the similarly high carrier concentrations and thereby a larger power factor compared with the SnTe-alloyed system. Density function theory calculations suggest that GeTe-alloying facilitates the electrical transport improvement due to the weakening of electron-phonon coupling through increasing bond covalency. Consequently, a high thermoelectric figure of merit ( ZT ) ∼0.80 at 648 K and a competitive average ZT of 0.41 over 300–648 K can be achieved in 1% GeTe-alloyed Cu 3 SbSe 4 . Our study provides a new route of increasing bond covalency to enhance mobility for better thermoelectric materials.