Mechanism of Grain Growth and Excellent Polarization, Dielectric Relaxtion of La 3+ , Nd 3+ Modified PZT Nano-Films Prepared by Sol–gel Technique

Liu Yang,De-Yi Zheng,Kai-Xin Guo,Wan-Nan Zhao,Ze-Hui Peng,Gui-Gui Peng,Tao Zhou

DOI: https://doi.org/10.1007/s10854-018-9974-3

2018-01-01

Journal of Materials Science Materials in Electronics

Abstract:Ferroelectric PbZr 0.52 Ti 0.48 O 3 film and its partial substitutions by rare earth ions La 3+ and Nd 3+ Pb 0.9 (La/Nd) 0.1 Zr 0.52 Ti 0.48 O 3 , grown on Pt(111)/Ti/SiO 2 /Si(100) substrates, were prepared via sol–gel and rapid thermal processes. Structural characterization by X-ray diffraction and scanning electron microscopy showed that Pb(Zr 0.52 Ti 0.48 )O 3 and Pb 0.9 La 0.1 (Zr 0.52 Ti 0.48 )O 3 films are of (111) preferred orientation but Pb 0.9 Nd 0.1 (Zr 0.52 Ti 0.48 )O 3 is more inclined to (100) reflection though both are of tetragonal perovskite structure. The results indicate that the piezoelectric properties of PZT thin films can be improved by doping La 3+ and Nd 3+ substituted A-site. The d 33 can be dramatically improved by doping La 3+ . Moreover, Pr of Pb(Zr 0.52 Ti 0.48 )O 3 films reaches up to 120.53 µC/cm 2 , while the doping samples present relatively inferior ferroelectric hysteresis loops ( Pr La = 64.32, Pr Nd = 53.17 µC/cm 2 ), greater dielectric constants, higher dielectric loss and lower leakage current than the undoped Pb(Zr 0.52 Ti 0.48 )O 3 sample. And meanwhile, the samples showed a typical non-Debye dielectric spectroscopy of multiple quantum relaxation time distribution observing from the Cole–Cole plot at room temperature.