Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Over 40 GHz Bandwidth and 0.7-V Vπ Compact InP-Based Electro-optic Modulator with N-I-n MQBs

40 GHz and 1.1-V Vπ InP-Based N-I-n EO Modulator

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

30 Gbps high optical bandwidth silicon modulator

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Breaking the Energy-Bandwidth Limit of Electrooptic Modulators: Theory and a Device Proposal

Sub-1 Volt and high-bandwidth visible to near-infrared electro-optic modulators

Ultracompact Electrooptic Silicon Modulator With Horizontal Photonic Crystal Slotted Slab

Ultra-compact Silicon Modulator with 110 GHz Bandwidth.

A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Ultra-compact Lithium Niobate Microcavity Electro-Optic Modulator beyond 110 GHz

Highly Efficient Slow-Light Mach-Zehnder Modulator Achieving 0.21 V Cm Efficiency with Bandwidth Surpassing 110 GHz

100 GHz Micrometer-Compact Broadband Monolithic ITO Mach-Zehnder Interferometer Modulator Enabling 3500 Times Higher Packing Density

Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission

High-speed Mid-infrared Silicon-based Electro-optic Modulator at 2 Μm

Ultra-wide Bandwidth Thin-film LiNbO<sub>3</sub> Modulator with Record-Low Half-wave-voltage Length Product

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Low Driving Voltage Band-Filling-Based Iii-V-On-Silicon Electroabsorption Modulator

0.52 V mm ITO-based Mach-Zehnder modulator in silicon photonics