40 GHz and 1.1-V Vπ InP-Based N-I-n EO Modulator

Jianghao Xing,Changzheng Sun,Bing Xiong,Jian Wang,Zhibiao Hao,Lai Wang,Yanjun Han,Hongtao Li,Yi Luo
DOI: https://doi.org/10.1364/cleo_si.2022.sm3n.6
2022-01-01
Abstract:An InP-based electro-optic modulator with an n-i-n heterostructure is demonstrated. An ultra-low half-wave voltage-length product of 0.22 V·cm is recorded, together with 40 GHz bandwidth for a 2-mm modulation length.
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