Abstract:The drawbacks of low thermal stability and high power consumption pose challenges to the application of phase change materials in the automotive industry and in‐memory computing. Numerous studies are conducted to enhance the performance of these materials. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. Phase change materials have issues in the automotive industry and in‐memory computing due to their limited thermal stability and high power consumption. Consequently, numerous studies are conducted to enhance the performance of these materials. Uncertainty persists regarding the effects and mechanisms of various doping on the parent material. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. The thermal stability of Sb2Te3 has been somewhat enhanced by doping these four elements, with Ta doping having the most impact. According to the ab initio molecular dynamics, this improvement results from the tetrahedral centered In and the increased coordination numbers of Ta, Ti, and Sc. Sc located at the center of the octahedron can accelerate the crystallization process. Ta, in particular, exerts the greatest influence on the migration rates of Sb and Te, resulting in the slowest grain growth rate. Simultaneously, it maximizes the delay in the transition from the cubic phase to the hexagonal phase. These features are beneficial for reducing power consumption. The elucidation of the distinct effects of doping elements sets the stage for phase change memory to adapt to various application scenarios.

Graphite Carbon-Doped Sb2Te Nanostructures for Phase-Change Memory Applications

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Nano-composite phase-change antimony thin film for fast and persistent memory operations

Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory

Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping

Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Ab initio molecular dynamics and materials design for embedded phase-change memory

Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure

Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material

Energy Efficient Neuro-Inspired Phase-Change Memory Based on Ge4 Sb6 Te7 as a Novel Epitaxial Nanocomposite

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Advantages of Sisb Phase-Change Material and Its Applications in Phase-Change Memory