Abstract:The smart edge nodes require efficient matrix-vector multiplications for local deep neural network (DNN) inference. Benefiting from its high density and CMOS compatibility, the eDRAM-based computing-in-memory (CIM) [1] –[4], especially with multi-level cells (MLCs) [4], attracts rising attention. However, the performance of prior MLCeDRAM CIM is severely limited by the inconsistency of weight representations during the programming and computing: weights are programmed as fixed voltages while transistor currents are used for computation. Thus, the programming of MLCs requires calibration due to the nonlinear transistor I-V, which can be extremely complicated in the presence of $V_{T H}$ variations. Furthermore, the computing precision is severely degraded by $\mathrm{V}_{\mathrm{TH}}$ variations when small computing currents are used for high parallelism. To fundamentally surmolunt this dilemma, we propose the first currentprogramming eDRAM CIM that unifies the weight programming and computing in the current domain. The enabling technique is a novel 3T1C eDRAM cell (Fig. 1, top right). It confers several key merits: 1) the cell is programmed by the weight current directly with the selfcalibrated voltage generated on the storage capacitor; it essentially stores the weight current instead of a fixed voltage, thus mitigating $V_{\text {TH}}$ variation and nonlinear transistor I-V impacts; 2) a dynamiccascoded read structure is proposed to significantly reduce the V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</inf> sensitivity while not requiring any bias voltage; 3) thanks to the accurately programmed cell, it supports MLC operation (8 current levels) without any calibration, largely increasing density; 4) a voltage-current two-step programming scheme significantly boosts the sub- $\mu \mathrm{A}$ current-weight writing speed. Combining these merits, the proposed eDRAM cell is naturally immune to transistor-level nonidealities, thus allowing a small LSB weight current of only 100nA. A $4 \mathrm{~b}$ CIM cell composed of 2MLCs is developed to support 4bsigned weights. It contains 15 current levels ranging from -700nA to 700nA. Fabricated in a $65 \mathrm{~nm}$ CMOS, the prototype achieves the highest macro-level 4b-MAC energy efficiency of 233-305TOPS/W among eDRAM CIMs.

A Calibration-Free 15-Level/cell Edram Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC Achieving 233-to-304-tops/w 4b MAC

A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC

A 4-Bit Calibration-Free Computing-In-Memory Macro with 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell Edram

A Low-Power In-Memory Multiplication and Accumulation Array with Modified Radix-4 Input and Canonical Signed Digit Weights

15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications

Cramming More Weight Data Onto Compute-in-Memory Macros for High Task-Level Energy Efficiency Using Custom ROM with 3984-Kb/mm$^{2}$ Density in 65-Nm CMOS

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

An Edram Based Computing-in-Memory Macro with Full-Valid-Storage and Channel-Wise-Parallelism for Depthwise Neural Network

16.3 A 28nm 384kb 6T-SRAM Computation-in-Memory Macro with 8b Precision for AI Edge Chips

A Twin-8T SRAM Computation-in-Memory Unit-Macro for Multibit CNN-Based AI Edge Processors

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

An XOR-10T SRAM computing-in-memory macro with current MAC operations and time-to-digital conversion for BNN edge processors

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

An 11T1C Bit-Level-Sparsity-Aware Computing-in-Memory Macro with Adaptive Conversion Time and Computation Voltage

A 28 Nm RRAM-Based 81.1 TOPS/mm2/bit Compute-In-Memory Macro with Uniform and Linear 64 Read Channels under 512 4-Bit Inputs

VSDCA: A Voltage Sensing Differential Column Architecture Based on 1T2R RRAM Array for Computing-in-Memory Accelerators

A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications

34.7 A 28nm 2.4Mb/mm<sup>2</sup> 6.9 - 16.3TOPS/mm<sup>2</sup> eDRAM-LUT-Based Digital-Computing-in-Memory Macro with In-Memory Encoding and Refreshing

34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs.

30 Mb/mm<sup>2</sup>/layer 3D eDRAM Computing-in-Memory with Embedded BEOL Peripherals and Local Layer-wise Calibration based on First-Demonstrated Vertically-stacked CAA-IGZO 4F<sup>2</sup> 2T0C Cell

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference