Abstract:The smart edge nodes require efficient matrix-vector multiplications for local deep neural network (DNN) inference. Benefiting from its high density and CMOS compatibility, the eDRAM-based computing-in-memory (CIM) [1] –[4], especially with multi-level cells (MLCs) [4], attracts rising attention. However, the performance of prior MLCeDRAM CIM is severely limited by the inconsistency of weight representations during the programming and computing: weights are programmed as fixed voltages while transistor currents are used for computation. Thus, the programming of MLCs requires calibration due to the nonlinear transistor I-V, which can be extremely complicated in the presence of $V_{T H}$ variations. Furthermore, the computing precision is severely degraded by $\mathrm{V}_{\mathrm{TH}}$ variations when small computing currents are used for high parallelism. To fundamentally surmolunt this dilemma, we propose the first currentprogramming eDRAM CIM that unifies the weight programming and computing in the current domain. The enabling technique is a novel 3T1C eDRAM cell (Fig. 1, top right). It confers several key merits: 1) the cell is programmed by the weight current directly with the selfcalibrated voltage generated on the storage capacitor; it essentially stores the weight current instead of a fixed voltage, thus mitigating $V_{\text {TH}}$ variation and nonlinear transistor I-V impacts; 2) a dynamiccascoded read structure is proposed to significantly reduce the V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</inf> sensitivity while not requiring any bias voltage; 3) thanks to the accurately programmed cell, it supports MLC operation (8 current levels) without any calibration, largely increasing density; 4) a voltage-current two-step programming scheme significantly boosts the sub- $\mu \mathrm{A}$ current-weight writing speed. Combining these merits, the proposed eDRAM cell is naturally immune to transistor-level nonidealities, thus allowing a small LSB weight current of only 100nA. A $4 \mathrm{~b}$ CIM cell composed of 2MLCs is developed to support 4bsigned weights. It contains 15 current levels ranging from -700nA to 700nA. Fabricated in a $65 \mathrm{~nm}$ CMOS, the prototype achieves the highest macro-level 4b-MAC energy efficiency of 233-305TOPS/W among eDRAM CIMs.

34.7 A 28nm 2.4Mb/mm<sup>2</sup> 6.9 - 16.3TOPS/mm<sup>2</sup> eDRAM-LUT-Based Digital-Computing-in-Memory Macro with In-Memory Encoding and Refreshing

An Overview of Computing-in-Memory Interfaces

7.3 A 28nm 38-to-102-tops/w 8b Multiply-Less Approximate Digital SRAM Compute-In-Memory Macro for Neural-Network Inference

A 1.041-Mb/mm 2 27.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications

34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs.

A 28nm 4170-Tflops/w/b and 195-Tflops/mm2/b Multiply-Free Fully-Digital Floating-Point Compute-In-Memory Macro with Mitchell's Approximation

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

16.3 A 28nm 384kb 6T-SRAM Computation-in-Memory Macro with 8b Precision for AI Edge Chips

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

A 40nm 33.6Tops/W 8T-SRAM Computing-in-Memory Macro with DAC-less Spike-Pulse-Truncation Input and ADC-less Charge-Reservoir-Integrate-Counter Output

A 44.3 TOPS/W SRAM Compute-in-Memory with Near-CIM Analog Memory and Activation for DAC/ADC-Less Operations

A High-Density and Reconfigurable SRAM-Based Digital Compute-In-Memory Macro for Low-Power AI Chips.

Area-and Power-Efficient Compute-in-Memory Macro Based on Oxide Semiconductor 2T0C Edram with Cell-System Co-Optimization

A 4-Bit Calibration-Free Computing-In-Memory Macro with 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell Edram

A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC

A 137.5 TOPS/W SRAM Compute-in-Memory Macro with 9-b Memory Cell-Embedded ADCs and Signal Margin Enhancement Techniques for AI Edge Applications

A 28 Nm RRAM-Based 81.1 TOPS/mm2/bit Compute-In-Memory Macro with Uniform and Linear 64 Read Channels under 512 4-Bit Inputs

A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications

S2D-CIM: A 22nm 128kb Systolic Digital Compute-in-Memory Macro with Domino Data Path for Flexible Vector Operation and 2-D Weight Update in Edge AI Applications

RDCIM: RISC-V Supported Full-Digital Computing-in-Memory Processor With High Energy Efficiency and Low Area Overhead