Direct Modulation Characteristics of 1.3-&Amp;#x00b5;m Dual-Mode Laser Diode

Namje Kim,Shihui Han,Kiwon Moon,Jung‐Woo Park,Hyunsung Ko,Min Yong Jeon,Kyung Hyun Park

DOI: https://doi.org/10.1109/irmmw-thz.2013.6665666

2013-01-01

Abstract:We have investigated the direct modulation characteristics of a phase-shifted 1.3-μm dual-mode laser diode. Stable dual-mode operation and high spectral purity are maintained under 2.5-Gbps direct modulation.

What problem does this paper attempt to address?

Shaping Current Waveforms for direct Modulation of Semiconductor Lasers

L. Illing,M. B. Kennel

DOI: https://doi.org/10.1109/JQE.2004.826446

2004-04-27

Abstract:We demonstrate a technique for shaping current inputs for the direct modulation of a semiconductor laser for digital communication. The introduction of shaped current inputs allows for the suppression of relaxation oscillations and the avoidance of dynamical memory in the physical laser device, i.e., the output will not be influenced by previously communicated information. On the example of time-optimized bits, the possible performance enhancement for high data rate communications is shown numerically.

Optics
Direct Modulation of Deep-Submicron Slotted Single Mode FP Laser

Danfeng Fan,Lei Wang,Tingting Yu,Li Zou,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.as4h.2

2012-01-01

Abstract:By utilizing chirp managed laser (CML) technology to improve the direct modulation performance of deep-submicron slotted single mode FP laser, a dispersion penalty of only 0.4 dB after 100 km SSMF is achieved. The back-to-back penalty is only 1.8 dB compared to a zero chirp LiNbO3 MZ transmitter.
Modulation System and Modulation Characteristics of High Power Semiconductor Laser

Wang Weipeng,Xu Yingtian,Zou Yonggang,Xu Li,Zhang He,Jin Liang,Li Yang,Zhao Xin,Ma Xiaohui

DOI: https://doi.org/10.11884/hplpb201729.170107

2017-01-01

High Power Laser and Particle Beams

Abstract:In this paper,we studied the factors that affect the high frequency modulation performance of semiconductor laser in the process of direct modulation.The equivalent circuit model of LD is derived from the rate equation of semiconductor laser,which was established by using PSpice.We analyzed the effects of the parasitic parameters,the DC bias and the current modulation intensity on modulation characteristics of the laser,and put forward the corresponding methods to improve the performance of modulation.We designed a direct modulation system of semiconductor laser and simulated the system by OrCAD/PSpice.This system can output modulation semiconductor laser with frequency of 1 MHz and average power of 1.1 W.
10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Jianjun Meng,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2078176

2015-01-01

Abstract:We report direct modulation results in a simple and compact widely tunable V-cavity laser. Chirp managed laser technology has been successfully applied to the V-cavity laser with an optical spectrum reshaping filter. The tunable V-cavity-laser employs a half-wave coupler to obtain single-mode operation with high side-mode suppression ratio and the Vernier effect to extend its tuning range. It does not require any grating structure and regrowth steps. In this experiment, we achieved single-electrode controlled wavelength tuning of about 18 channels at 100GHz spacing with a fixed temperature, and 32 channels using 2 temperature settings. Well-open eye diagrams with extinction ratio above 4.3dB in all channels are observed when the laser is directly modulated at 2.5Gb/s. Although the measured small-signal frequency response is only about 5.7GHz, more than 6.7dB extinction ratio under 10Gb/s modulation rate is achieved by using the chirp managed laser technology with an optical spectrum reshaping filter placed after the output of the laser to convert the frequency chirp accompanying the direct modulation to amplitude modulation. The advantages of compactness, fabrication simplicity, easy wavelength control algorithm, and simple direct modulation offer great potential for the chirped managed V-cavity laser to be used in low-cost WDM links.
30-Ghz Directly Modulation DFB Laser with Narrow Linewidth

Zhike Zhang,Jianguo Liu,Yu Liu,Jinjin Guo,Haiqing Yuan,Jinhua Bai,Ninghua Zhu

DOI: https://doi.org/10.1364/acpc.2015.am1b.3

2015-01-01

Abstract:we report a 1.3μm 30-GHz directly modulation distributed feed-back laser with narrow linewidth of 130kHz and high side-mode suppression ratio of 52dB. The output power is more than 16mW at 100mA and the input 1-dB compression point is showed with different frequencies.
Q-modulated Semiconductor Laser

Jian-Jun He

DOI: https://doi.org/10.1117/12.708432

2007-01-01

Abstract:A novel Q-modulation scheme for high-speed modulation of semiconductor laser is presented. The modulator consists of an anti-resonant Fabry-Perot cavity acting as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. Static and small-signal dynamic simulation results are presented, demonstrating its operating principle and distinct characteristics. The monolithically integrated Q-modulated laser (QML) has potential advantages of high speed, high extinction ratio, low wavelength chirp and high power efficiency.
Proposal for $Q$ -Modulated Semiconductor Laser

Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2007.891242

IF: 2.6

2007-01-01

IEEE Photonics Technology Letters

Abstract:A novel structure and mechanism for high-speed modulation of semiconductor lasers are proposed and analyzed. The modulator consists of an antiresonant cavity acting as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the reflectivity of the rear reflector, and consequently the Q-factor, the lasing threshold, and the output power. An implementation structure and numerical results for a Q-modulated distributed feedback laser are presented. The monolithically integrated Q-modulated laser has potential advantages of high speed, low wavelength chirp, high extinction ratio, and high power efficiency.
Direct Modulation of Widely Tunable V-Cavity-Laser for Low-Cost WDM Access Networks

Jianjun Meng,Hongli Zhu,Sen Zhang,Li Zou,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2013.aw4a.6

2013-01-01

Abstract:We demonstrate direct modulation in compact widely tunable V-cavity-laser. Dynamic mode hopping is avoided and well-open eye diagrams were measured for 2.5Gbps and 5Gbps after 50km and 20km transmissions, respectively.
10-Gbit/s direct modulation of a TO-56-can packed 600-μm long laser diode with 2% front-facet reflectance

Shih-Ying Lin,Yu-Chuan Su,Yi-Cheng Li,Hai-Lin Wang,Gong-Cheng Lin,Shian-Ming Chen,Gong-Ru Lin

DOI: https://doi.org/10.1364/OE.21.025197

2013-10-21

Abstract:A 600-μm long-cavity laser diode with a front-facet reflectance of 2% is demonstrated as a colorless OC-192 transmitter for the future DWDM-PON, which is packed in a TO-56-can package of only 4-GHz frequency bandwidth but can be over-bandwidth modulated with 10-Gbit/s non-return-to-zero data-stream. The coherent injection-locking successfully suppresses its side-mode intensity and noise floor level, which further improves its modulation throughput at higher frequencies. With increasing the coherent injection-locking power from -12 to -3 dBm, the side-mode suppression ratio significantly increases from 39 to 50 dB, which also suppresses the frequency chirp from -12 to -4 GHz within a temporal range of 150 ps. The dense but weak longitudinal modes (with 0.6-nm spacing) in the long-cavity laser diode suppresses to one single-mode in a 100-GHz wide DWDM channel for carrying the OC-192 data at 9.953 Gbit/s. Such an over-bandwidth modulated laser diode still exhibits an on/off extinction ratio of 6.68 dB and a signal-to-noise ratio of 4.96 dB, which can provide a back-to-back receiving power sensitivity of -12.2 dBm at BER of 10⁻⁹. After 25-km DSF transmission of the OOK data-stream at a bit rate up to 10 Gbit/s, the receiving power sensitivity is -10.1 dBm at a requested BER of 10⁻⁹.
Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Dekun Liu,Min Lou,Jian-Jun He

DOI: https://doi.org/10.1109/jlt.2009.2036942

IF: 4.7

2009-01-01

Journal of Lightwave Technology

Abstract:The static and dynamic characteristics of digital wavelength switching in a novel V-coupled-cavity semiconductor laser is investigated. In contrast to previously investigated Y-laser, the V-shaped coupler can realize not only an optimum coupling coefficient but also a ¿-phase difference between the cross-coupling and self-coupling coefficients, which results in a high single-mode selectivity. It is shown that while switching to an optimal current value results in the maximal output power and maximal side-mode suppression ratio (SMSR), the digitally wavelength switchable laser has a good tolerance on the accuracy of the switching current. For a current deviation corresponding to ±25% of the channel spacing, the SMSR only degrades by about 5.2 dB, while the wavelength varies by only ±0.01 nm from the set value for the case of 0.8 nm channel spacing. The dynamic properties including the switching transients and switching delay are also investigated and discussed.
Numerical Analysis for High-Speed Hybrid- Modulation Semiconductor Laser Integrated With Passive Waveguide

Hiroshi Yasaka,Nobuhide Yokota,Takahiko Shindo,Wataru Kobayashi

DOI: https://doi.org/10.1109/jqe.2024.3424421

IF: 2.5

2024-07-20

IEEE Journal of Quantum Electronics

Abstract:The high-speed intrinsic modulation characteristics of a hybrid-modulation laser diode integrated with a passive waveguide was numerically analyzed. It was confirmed that the 3-dB intrinsic small-signal modulation bandwidth depended on the coupling coefficient of the corrugation grating at the distributed feedback (DFB) section and modulation amplitude ration (MAR) at the DFB and intra-cavity loss-modulation sections. The modulation bandwidth became wider when decreased and MAR increased. The maximum 3-dB E/O modulation bandwidth was more than 600 GHz when and MAR were from 40 to 80 cm−1 and 6.4 V. It remained more than 300 GHz when was from 40 to 200 cm−1 and MAR was from 3.2 to 6.4 V. Dynamic single-mode operation of the laser was demonstrated numerically with a 200-Gbit/s non-return-to-zero (NRZ) modulation signal. A clear eye-opened optical NRZ pattern with a minimum extinction ratio at the eye-opening area of more than 1.0 dB was confirmed in a wide operation range and at a higher bit rate up to 300 Gbit/s.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

Yi Luo,Changzheng Sun,Guopeng Wen,Tongming Li,Xinmin Yang,Yousheng Wu,Renfan Wang,CaiLing Wang,Tao Huang,Jinyan Jin

1999-01-01

Abstract:Based on fabricating a 1.55 μm InGaAsP/InP partially-gain-coupled DFB laser/electroabsorption modulator monolithic integrated device using a very simple device structure, we improved the performance of the device and constructed a standard 14-pin butterfly packaged transmitter module. The threshold current of the module is around 20-30 mA, with over 40 dB side mode suppress ratio. The coupled output optical power is 2 mW, and the extinction ratio under 3V reverse bias is greater than 17 dB. 2.5 Gb/s transmission over 240 km of standard fiber is demonstrated, power penalty less than 0.5dB is obtained at BER=10-10.
Hybrid Integrated Laser Emission Module with DFB Laser Diode and Thin-Film LiNbO3 Modulator

Keqi Cao,Yiming Zhang,Xinyan Zhang,Jia Chen,Wei Lin,Jian Wang,Kunpeng Zhai,Hang Yu,Weihua Guo,Ninghua Zhu,Ming Li,Yu Liu

DOI: https://doi.org/10.1109/lpt.2024.3428537

IF: 2.6

2024-01-01

IEEE Photonics Technology Letters

Abstract:In this letter, we packaged a DFB laser diode chip and a thin film LiNbO 3 modulator chip in a single shell through hybrid integration, and formed an integrated laser emission module. This module exhibits an output power of 15.6mW, an optical insertion loss of 5.60dB, a linewidth of 15.2kHz, a 3dB bandwidth of 36.7GHz. And at 10GHz, it exhibits an 1dB compression point of 13.0dBm, a gain of -39.8dB, an input third-order intercept point of 26.9dBm, and a spurious-free dynamic range of 89.9dB·Hz 3/2 .
On The Characterization Of A Green-Light Directly-Modulated Diode-Pumped Solid-State Laser

Jing Xu,Chao Zhang,Meiwei Kong,Bin Sun,Jiongliang Wang,Bo Cong

DOI: https://doi.org/10.1109/icocn.2017.8121601

2017-01-01

Abstract:Directly modulated semiconductor lasers for underwater wireless optical communication (UWOC) have limitations in output power and beam quality. Diode pumped solid- state lasers (DPSSLs) have the merits of long lifetime, high stability, large power and good beam quality, which are promising to realize long reach UWOC. We compose a DPSSL with discrete components and measure its key parameters. The bandwidth constraint of the DPSSL imposed by the long lifetime of the gain medium is circumvented with the strategy of orthogonal frequency-division multiplexing (OFDM). After 5.74-m underwater transmission, the BERs of the 40.28-Mb/s 32- quadrature amplitude modulation (QAM) signal and the 50.78-Mb/s 16-QAM signal are 1.09 x 10(-3) and 3.53 x 10(-3), respectively. We also demonstrate that the QAM order generated by the directly modulated DPSSL can be as high as 128.
2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure

Y Luo,Gp Wen,Cz Sun,Tn Li,Xm Yang,Ys Wu,Rf Wang,Cl Wang,T Huang,Jy Jin

DOI: https://doi.org/10.1143/jjap.38.l524

IF: 1.5

1999-01-01

Japanese Journal of Applied Physics

Abstract:An electroabsorption (EA) modulator integrated with a partially gain-coupled distributed feedback (DFB) semiconductor laser is fabricated using a very simple device structure. An identical epitaxtial layer is used for the active layer of the laser and the waveguide of the modulator to achieve wavelength compatibility between the two components. The fabricated device shows a low threshold current of 27 mA, a large extinction ratio of over 17 dB at -3 V, and a fiber coupled power of 2.7 mW. Packaged modules are also fabricated for 2.5 Gb/s operation. The power penalty at a 10-10 bit-error rate is less than 0.5 dB after transmission through 240 km of traditional fiber. The influence of lasing wavelength detuning on device performance is also discussed based on our experimental data.
&Lt;title>integrated ,module of a DFB Laser and LiNbO<formula><inf><roman>3</roman></inf></formula> Modulator</title>

Chengcheng Sun,Shizhong Xie,Fenghai Liu,Yong Xie,Weiming Mao,Baiqin Zhao,Heng Ge

DOI: https://doi.org/10.1117/12.253180

1996-01-01

Abstract:The linewidth broadening of Distributed Feedback (DFB) semiconductor lasers under direct modulation become more and more serious with the increase of modulating data rate. So it is important to investigate externally modulated transmitter module whose dynamic linewidth is the same as its static linewidth. The integrated module including DFB-LD and LN modulator reported here has a 3 dB-bandwidth of 3.8 GHz, 4 V drive voltage, and operating wavelength at 1548 nm, its linewidth is about 100 MHz measured by Gated Delay Self Homodyne and output power is 200 (mu) W. It has been used in optical transmission system and shows good characteristics.
A Kind of High Bit Rate Laser Diodes Driver

ZY Wang,MQ Shi,ZY Zhang,LX Zhu,AS Xu,DM Wu,LZ Xie

DOI: https://doi.org/10.1109/icct.1996.545191

1996-01-01

Abstract:This paper introduced a new kind of high bit rate laser diodes' driver. With silicon bipolar microwave transistors (NEC 3358, f/sub t//spl ap/7 GHz) as active devices, the driver can provide high speed current drive for laser diodes with bit rates up to 622 Mbits/s. The driver's modulation and pre-bias current are about 25 mA and 50 mA, respectively. We used the drivers in a WDM optical fiber communication system, which has four 622 Mbits/s channels, eight 140 Mbits/s channels, 3 EDFAs and 251.6 km of single mode optical fiber. The bit error rates of all the four 622 Mbits/s channels are better than 1/spl times/10/sup -13/.
Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes under Mutual Injection Locking

Changzheng Sun,Dong Liu,Bing Xiong,Yi Luo,Jian Wang,Zhibiao Hao,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.1109/jstqe.2015.2478817

IF: 4.9

2015-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Modulation characteristics enhancement by mutual injection locking of monolithically integrated lasers is demonstrated. Resonance frequency as high as 34.3 GHz is recorded. The nonlinearity and chirp performances are simultaneously improved compared with free running state.
Chirp-Managed Directly-Modulated DFB Laser

Zhensheng Jia,Jianjun Yu,Gee-Kung Chang

DOI: https://doi.org/10.2174/187221207779814653

2007-01-01

Recent Patents on Engineering

Abstract:We review recent patents on a chirp managed transmitter comprised of a DML and the subsequent optical bandpass filter. Large dispersion tolerance of this transmitter is realized by chirp control through the phase correlation between adjacent bits for the destructive interference in order to erase the power of"0" bits and enhance the extinction ratio. The reach of this transmitter without dispersion compensation is superior to the best reported DML-based and duobinary transmitters. The results show that this is a promising solution to meet the size, power, capacity and cost requirements of the optical links simultaneously in the today and tomorrow's metro and access networks.
Low-chirp and External Optical Feedback Resistant Characteristics in Λ/8 Phase-Shifted Distributed-Feedback Laser Diodes under Direct Modulation

Yidong Huang,Kenji Satô,Tomoyuki Okuda,N. Suzuki,S. Ae,Y. Muroya,Koichi Mori,T. Sasaki,Kohroh Kobayashi

DOI: https://doi.org/10.1109/jqe.2002.804292

IF: 2.5

2002-01-01

IEEE Journal of Quantum Electronics

Abstract:Clarifies that phase shift value in directly modulated distributed feedback laser diodes (DFB-LDs) affects their chirp characteristics and resistance to external optical feedback because of the feedback effect of mirror loss (FEML). Comparing /spl lambda//8, /spl lambda//4, and 3//spl lambda/8 phase-shifted DFB-LDs, theoretically and experimentally, showed that the negative FEML in /spl lambda//8 phase-shifted DFB-LDs improves their transmission performance and makes them more resistant to external optical feedback. It was demonstrated with 2.5-Gb/s directly modulated 1.55-/spl mu/m /spl lambda//8 phase-shifted DFB-LDs that a very low-power penalty for 100-km transmissions (less than 1 dB for BER=10/sup -10/) can be obtained within a wide extinction ratio from 8.5 to 14.5 dB. Excellent resistance to optical feedback was also demonstrated using /spl lambda//8 phase-shifted DFB-LDs: isolator-free 80-km transmission was successful under -14-dB external optical feedback. In addition, the relation of transmission characteristics to coupling coefficient /spl kappa/L and detuning between oscillation wavelength and gain maximum was also discussed here for designing low chirp /spl lambda//8 phase-shifted DFB-LDs.

Direct Modulation Characteristics of 1.3-&Amp;#x00b5;m Dual-Mode Laser Diode

Shaping Current Waveforms for direct Modulation of Semiconductor Lasers

Direct Modulation of Deep-Submicron Slotted Single Mode FP Laser

Modulation System and Modulation Characteristics of High Power Semiconductor Laser

10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

30-Ghz Directly Modulation DFB Laser with Narrow Linewidth

Q-modulated Semiconductor Laser

Proposal for $Q$ -Modulated Semiconductor Laser

Direct Modulation of Widely Tunable V-Cavity-Laser for Low-Cost WDM Access Networks

10-Gbit/s direct modulation of a TO-56-can packed 600-μm long laser diode with 2% front-facet reflectance

Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Numerical Analysis for High-Speed Hybrid- Modulation Semiconductor Laser Integrated With Passive Waveguide

2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

Hybrid Integrated Laser Emission Module with DFB Laser Diode and Thin-Film LiNbO3 Modulator

On The Characterization Of A Green-Light Directly-Modulated Diode-Pumped Solid-State Laser

2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure

&Lt;title&gt;integrated ,module of a DFB Laser and LiNbO&lt;formula&gt;&lt;inf&gt;&lt;roman&gt;3&lt;/roman&gt;&lt;/inf&gt;&lt;/formula&gt; Modulator&lt;/title&gt;

A Kind of High Bit Rate Laser Diodes Driver

Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes under Mutual Injection Locking

Chirp-Managed Directly-Modulated DFB Laser

Low-chirp and External Optical Feedback Resistant Characteristics in Λ/8 Phase-Shifted Distributed-Feedback Laser Diodes under Direct Modulation

&Lt;title>integrated ,module of a DFB Laser and LiNbO<formula><inf><roman>3</roman></inf></formula> Modulator</title>