Abstract:This paper presents a comprehensive investigation on the role and manifestation of the FinFET effect in low voltage 4H-SiC MOSFETs as compared to their Si counterparts. For this purpose, a finite element model of a fabricated SiC FinFET with a fin width of 55 nm is constructed and calibrated to experimental data at a range of operating temperatures. The resulting TCAD model is then applied to examine the impact of the FinFET effect on the threshold voltage and the spatial variation of the carrier density and the drift mobility in the channel for a range of doping concentrations N A of the p-well. It is thereby shown that by reducing the fin width W fin from conventional values ≳ 500 nm down to an interval of optimal values ∼40 nm (keeping everything else constant), it is possible to enhance the channel mobility ∼2.5 times. This improvement is not only found to be much larger than the one predicted in Si (where it is ∼ 15% according to the TCAD model) but also arises at a larger fin width (for a given N A ). In this respect, it is demonstrated that this optimal range of fin widths can be moved to even larger, more practical values by reducing the doping of the p-well. As an alternative, the on-state performance of the gate-all-around FET is also examined in detail following a similar procedure. It is hence shown that this structure can display the FinFET effect at an even larger, nearly conventional W fin of ∼250 nm, whilst attaining a higher channel mobility and inversion layer density even than a stripe FinFET operated at the same overdrive. Thus, in light of all these advantages, the FinFET topology can play a key role in reducing the channel resistance of SiC power MOSFETs.

An 84K-295K Small Signal Circuit Model for Fin Field Effect Transistor

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Scalable RFCMOS Model for 90 Nm Technology

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Small-signal non-quasi-static model of a multi-fin FinFET for analog and linearity analysis: the role of gate resistance

Novel Physics-Based Small-Signal Modeling and Characterization for Advanced RF Bulk FinFETs

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs

Three-Dimensional Monte Carlo Simulation of Bulk Fin Field Effect Transistor

Temperature-Dependent Threshold Voltage Extraction of FinFETs Using Noise Measurements

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

Accurate Small-Signal Model and Its Parameter Extraction in Rf Silicon Mosfets

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

An Improved Large-Signal Equivalent Circuit Model for Partially Depleted Silicon-on-Insulator MOSFET

A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits

A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection

Modeling, Simulation and Performance Analysis of Drain Current for Below 10 nm Channel Length Based Tri-Gate FinFET

Analytical Model of Channel Electric Field Profile in Finfet

Key Characterization Factors of Accurate Power Modeling for FinFET Circuits

Nanoscale Triple-Gate FinFET Design Considerations Based on an Analytical Model of Short-Channel Effects

Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz