Abstract:This study utilized ion implantation to modify the material properties of silicon carbide (SiC) to mitigate subsurface damage during SiC machining. The paper analyzed the mechanism of hydrogen ion implantation on the machining performance of SiC at the atomic scale. A molecular dynamics model of nanoscale cutting of an ion-implanted SiC workpiece using a non-rigid regular tetrakaidecahedral diamond abrasive grain was established. The study investigated the effects of ion implantation on crystal structure phase transformation, dislocation nucleation, and defect structure evolution. Results showed ion implantation modification decreased the extension depth of amorphous structures in the subsurface layer, thereby enhancing the surface and subsurface integrity of the SiC workpiece. Additionally, dislocation extension length and volume within the lattice structure were lower in the ion-implanted workpiece compared to non-implanted ones. Phase transformation, compressive pressure, and cutting stress of the lattice in the shear region per unit volume were lower in the ion-implanted workpiece than the non-implanted one. Taking the diamond abrasive grain as the research subject, the mechanism of grain wear under ion implantation was explored. Grain expansion, compression, and atomic volumetric strain wear rate were higher in the non-implanted workpiece versus implanted ones. Under shear extrusion of the SiC workpiece, dangling bonds of atoms in the diamond grain were unstable, resulting in graphitization of the diamond structure at elevated temperatures. This study established a solid theoretical and practical foundation for realizing non-destructive machining at the atomic scale, encompassing both theoretical principles and practical applications.

Nanoindentation Study of Silicon-implanted Monocrystal Cubic Silicon Carbide

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Molecular Dynamics Simulation of Ion-Implanted Single-Crystal 3C-Sic Nano-Indentation

Mechanical properties and indentation-induced phase transformation in 4H–SiC implanted by hydrogen ions

Nano-cutting mechanism of ion implantation-modified SiC: reducing subsurface damage expansion and abrasive wear

Amorphization-governed Elasto-Plastic Deformation under Nanoindentation in Cubic (3C) Silicon Carbide

Study on Mechanical Properties of Single-Crystal Silicon Carbide by Nanoindentation

Atomic Study on Deformation Behavior and Anisotropy Effect of 3C-Sic under Nanoindentation

Molecular dynamics analysis of the influence of ion implantation parameters on ultra-precision machining of silicon carbide

Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces

Nano material removal mechanism of 4H-SiC in ion implantation-assisted machining

Influence of the C+-implantation on the Micro-Tribological Behavior of Silicon Wafer

Research on Nano-Mechanical and Micro-Tribological Behaviors of C+- Implanted Silicon

Research on the Nanohardness of Single Crystal Silicon before and after N~+-implanted

Modification Mechanism of Collaborative Ions Implanted into 4H-Sic by Atomic Simulation and Experiment

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

A Study of Deformation Behavior and Phase Transformation in 4H-Sic During Nanoindentation Process Via Molecular Dynamics Simulation

Nanoindentation of cubic silicon carbide on silicon film

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Influence of C~+ -Implanted Energy on Tribological Behaviour of Silicon

Simulation Study of Material Deformation in Monocrystal Silicon Nano-Machining