Magnetic Moments of Mn in Amorphous Si and Ge: Theory and Experiment

F. Hellman,Li Zeng,E. Helgren,Jun Cao,Ruqian Wu,Cínthia Piamonteze,Elke Arenholz,David J. Smith

2008-01-01

Abstract:Author(s): Hellman, F.; Zeng, L.; Helgren, E.; Cao, J.; Wu, R.; Piamonteze, C.; Arenholz, E.; Smith, D.J.

What problem does this paper attempt to address?

Magnetism in Mn Nanowires and Clusters as δ-doped Layers in Group IV Semiconductors (Si, Ge)

K. R. Simov,P.-A. Glans,C. A. Jenkins,M. Liberati,P. Reinke1

DOI: https://doi.org/10.48550/arXiv.1707.00217

2017-07-02

Abstract:Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding a thin Mn-film as a {\delta}-doped layer in group-IV matrix. The Mn-layer consists of a dense layer of monoatomic Mn-wires, which are oriented perpendicular to the Si(001)-(2x1) dimer rows, or Mn-clusters. The nanostructures are covered with an amorphous Si or Ge capping layer, which conserves the identity of the {\delta}-doped layer. The analysis of the bonding environment with STM is combined with the element-specific detection of the magnetic signature with X-ray magnetic circular dichroism. The largest moment (2.5 {\mu}B/Mn) is measured for Mn-wires, which have ionic bonding character, with an a-Ge overlayer cap, a-Si capping leads to a slightly reduced moment which has its origin in subtle variation of bonding geometry. Our results directly confirm theoretical predictions on magnetism for Mn-adatoms on Si(001). The moment is quenched to 0.5{\mu}B/Mn for {\delta}-doped layers, which are dominated by clusters, and thus develop an antiferromagnetic component from Mn-Mn bonding.

Materials Science
Magnetic molecular orbitals in MnSi

Zhendong Jin,Yangmu Li,Zhigang Hu,Biaoyan Hu,Yiran Liu,Kazuki Iida,Kazuya Kamazawa,Matthew B. Stone,Alexander I. Kolesnikov,Douglas L. Abernathy,Xiangyu Zhang,Haiyang Chen,Yandong Wang,Chen Fang,Biao Wu,Igor A. Zaliznyak,John M. Tranquada,Yuan Li

DOI: https://doi.org/10.1126/sciadv.add5239

IF: 13.6

2023-01-05

Science Advances

Abstract:A large body of knowledge about magnetism is attained from models of interacting spins, which usually reside on magnetic ions. Proposals beyond the ionic picture are uncommon and seldom verified by direct observations in conjunction with microscopic theory. Here, using inelastic neutron scattering to study the itinerant near-ferromagnet MnSi, we find that the system's fundamental magnetic units are interconnected, extended molecular orbitals consisting of three Mn atoms each rather than individual Mn atoms. This result is further corroborated by magnetic Wannier orbitals obtained by ab initio calculations. It contrasts the ionic picture with a concrete example and presents an unexplored regime of the spin waves where the wavelength is comparable to the spatial extent of the molecular orbitals. Our discovery brings important insights into not only the magnetism of MnSi but also a broad range of magnetic quantum materials where structural symmetry, electron itinerancy, and correlations act in concert.

multidisciplinary sciences
Magnetism of Amorphous Ge1−xMnx Magnetic Semiconductor Films

Jiang-xia Deng,Yu-feng Tian,Shi-shen Yan,Qiang Cao,Guo-lei Liu,Yan-xue Chen,Liang-mo Mei,Gang Ji,Ze Zhang

DOI: https://doi.org/10.1063/1.2951460

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:Amorphous Ge1−xMnx magnetic semiconductor films with high Mn concentrations were prepared on liquid-nitrogen (LN2)-cooled glass substrates by ultrahigh vacuum thermal coevaporation. Hysteresis loops measured at 5K show coexistence of ferromagnetism and paramagnetism. The maximum Curie temperature of 220K was found in Ge0.48Mn0.52 film. Moreover, exchange bias occurs in magnetization hysteresis loops for samples with higher Mn concentrations, which can be explained by the antiferromagntic exchange coupling between ferromagnetic phase and antiferromagnetic phase. All the Ge1−xMnx magnetic semiconductor films show semiconducting transport behavior and anomalous Hall effects below the Curie temperature, indicating carrier-mediated ferromagnetism.
Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Yong Jiang,Wensheng Yan,Zhihu Sun,Qinghua Liu,Zhiyun Pan,Tao Yao,Yuanyuan Li,Zemin Qi,Guobin Zhang,Pengshou Xu,Ziyu Wu,Shiqiang Wei

DOI: https://doi.org/10.1088/1742-6596/190/1/012100

2009-01-01

Abstract:X-ray absorption fine structure (XAFS) and first-principles calculations are effectively combined to establish correlations of fabrications, atomic and electronic structures as well as ferromagnetism for the Mn-doped dilute magnetic semiconductors (DMS), and to shed light on the magnetism origin for a variety of ZnO-, GaN-, and Si-based DMSs. The results of Mn: ZnO and (Mn, N): ZnO thin films reveal that either the existence of Zn vacancy or N substitution of O sites can stabilize the ferromagnetic interactions between neighboring MnMn pairs, and enhance the magnetic moment per Mn. In a 2.5at.% Mn-doped GaN film, a part of substantial Mn ions is found to locate at the interstitial sites near the substitutional Mn ions, forming Mn-Mn dimers that possess unique electronic and magnetic properties. Similar phenomena have also been found in the Mn-doped Si system in which the interstitial Mn atoms intend to assemble together via an intervening substitutional Mn ion. We have proposed a pathway to understand the microscopic origin of ferromagnetism in the DMS materials from the viewpoint of experimental determination and theoretical calculations.
Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si

wang yong,zou jin,zhao zuoming,han xinhai,zhou xiaoyu,k l wang

DOI: https://doi.org/10.1063/1.2875110

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:Mn behaviors in the Ge0.96Mn0.04 thin films grown on Si (001) substrates by molecular beam epitaxy were investigated by high resolution transmission electron microscopy, electron energy loss spectroscopy, and energy dispersive spectroscopy. Unlike the previously reported case of GeMn thin films grown on Ge, Mn has been found to be diffused toward to the surface during the thin film growth. When the Mn concentration is sufficiently high, Mn5Ge3 clusters may be formed. Further annealing of the high Mn concentrated thin film promotes the formation of alpha-Mn metallic clusters. We believe that all these extraordinary phenomena are attributed to Si as the substrate. (c) 2008 American Institute of Physics.
Anomalous Magnetic Behavior Of Mn-Mn Dimers In The Dilute Magnetic Semiconductor (Ga,Mn)N

Qinghua Liu,Zhihu Sun,Wensheng Yan,Wenjie Zhong,Zhiyun Pan,Luyuan Hao,Shiqiang Wei

DOI: https://doi.org/10.1103/PhysRevB.76.245210

IF: 3.7

2007-01-01

Physical Review B

Abstract:First-principles calculations were performed to study the electronic structure and magnetic interactions of Mn-Ga-Mn-I dimer formed by the neighboring substitutional Mn-Ga and interstitial Mn-I ions in the zinc-blende structured (Ga,Mn)N dilute magnetic semiconductor. On the basis of the formation energy calculations, we show that the clustering of Mn-Ga and Mn-I in (Ga,Mn)N is energetically favored. The Mn-Ga and Mn-I ions in the Mn-Ga-Mn-I dimer are antiferromagnetically coupled, but this cannot strikingly reduce the magnetic moments induced by Mn-Ga due to the strong localization character of Mn-I gap states. It is found that Mn-Ga-Mn-I dimer in zinc-blende structured (Ga,Mn)N possesses unique electronic and magnetic properties, as compared with their counterparts in wurtzite structured (Ga,Mn)N or zinc-blende structured (Ga,Mn)As. The present study can provide some insight into understanding the rather scattered magnetic moment per Mn ion observed experimentally.
Complex magnetic structure and spin waves of the noncollinear antiferromagnet Mn5Si3

N. Biniskos,F. J. dos Santos,K. Schmalzl,S. Raymond,M. dos Santos Dias,J. Persson,N. Marzari,S. Blügel,S. Lounis,T. Brückel

DOI: https://doi.org/10.1103/PhysRevB.105.104404

2021-12-07

Abstract:The investigations of the interconnection between micro- and macroscopic properties of materials hosting noncollinear antiferromagnetic ground states are challenging. These forefront studies are crucial for unraveling the underlying mechanisms at play, which may prove beneficial in designing cutting edge multifunctional materials for future applications. In this context, Mn5Si3 has regained scientific interest since it displays an unusual and complex ground state, which is considered to be the origin of the anomalous transport and thermodynamic properties that it exhibits. Here, we report the magnetic exchange couplings of the noncollinear antiferromagnetic phase of Mn5Si3 using inelastic neutron scattering measurements and density functional theory calculations. We determine the ground-state spin configuration and compute its magnon dispersion relations which are in good agreement with the ones obtained experimentally. Furthermore, we investigate the evolution of the spin texture under the application of an external magnetic field to demonstrate theoretically the multiple field-induced phase transitions that Mn5Si3 undergoes. Finally, we model the stability of some of the material's magnetic moments under a magnetic field and we find that very susceptible magnetic moments in a frustrated arrangement can be tuned by the field.

Mesoscale and Nanoscale Physics,Materials Science
Magnetic Mn-Doped Ge Nanostructures

Faxian Xiu

DOI: https://doi.org/10.5402/2012/198590

2012-01-01

ISRN Condensed Matter Physics

Abstract:With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical understanding on the ferromagnetism in MnxGe1−x DMS, pointing out the possible physics models underlying the complicated ferromagnetic behavior of MnxGe1−x. Then we carry out detailed analysis of MnxGe1−x thin films and nanostructures grown by molecular beam epitaxy. We show that with zero and one dimension quantum structures, superior magnetic properties of MnxGe1−x compared with bulk films can be obtained. More importantly, with MnxGe1−x nanostructures, such as quantum dots, we demonstrate a field controlled ferromagnetism up to 100 K. Finally we provide a prospective of the future development of ferromagnetic field effect transistors and magnetic tunneling junctions/memories using dilute and metallic MnxGe1−x dots, respectively. We also point out the bottleneck problems in these fields and rendering possible solutions to realize practical spintronic devices.
Mn distribution behaviors and magnetic properties of GeMn films grown on Si (0 0 1) substrates

Masaaki Ogawa,Xinhai Han,Zuoming Zhao,Yong Wang,Kang L. Wang,Jin Zou

DOI: https://doi.org/10.1016/j.jcrysgro.2008.12.013

IF: 1.8

2009-01-01

Journal of Crystal Growth

Abstract:Mn distribution behaviors and magnetic properties of the Ge0.96Mn0.04 films have been investigated. Different nominal amounts, 12 and 80 nm, of Ge0.96Mn0.04 were grown on Si (0 0 1) substrates at 250 degrees C using solid source molecular beam epitaxy. Electron energy loss spectroscopy (EELS) indicates that Mn diffuses toward the surface during the growth. The room-temperature ferromagnetism is observed for the as-grown and annealed films. Magnetic moment versus temperature curves are correlated with the structural properties. (c) 2008 Elsevier B.V. All rights reserved.
Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substrates

Masaaki Ogawa,Xinhai Han,Zuoming Zhao,Yong Wang,Kang L. Wang,Jin Zou

DOI: https://doi.org/10.1016/j.jcrysgro.2008.12.013

IF: 1.8

2009-01-01

Journal of Crystal Growth

Abstract:Mn distribution behaviors and magnetic properties of the Ge0.96Mn0.04 films have been investigated. Different nominal amounts, 12 and 80 nm, of Ge0.96Mn0.04 were grown on Si (0 0 1) substrates at 250 degrees C using solid source molecular beam epitaxy. Electron energy loss spectroscopy (EELS) indicates that Mn diffuses toward the surface during the growth. The room-temperature ferromagnetism is observed for the as-grown and annealed films. Magnetic moment versus temperature curves are correlated with the structural properties. (c) 2008 Elsevier B.V. All rights reserved.
The Role of Correlations in the Magnetic Moment of MnSi

Robert D. Collyer,Dana A. Browne

DOI: https://doi.org/10.48550/arXiv.0905.4061

2009-05-25

Strongly Correlated Electrons

Abstract:We explored the anomalously low moment in MnSi found by experiment (~0.4 $\mu_{\text{B}}$/Mn) vs the moment predicted by density functional theory (~1.0 $\mu_{\text{B}}$/Mn). With the addition of a Hubbard-U correction, we found several solutions with lower moments. These lower moment solutions show an unusual magnetic order and a magnetic quadrupole moment. The behavior of the moment under pressure does not follow the experimental trend.
Structure, magnetic and magnetocaloric properties of the Mn5Ge3 thin film grown on Si(111)

A. S. Tarasov,S. V. Komogortsev,A. V. Lukyanenko,I. A. Yakovlev,I. A. Tarasov,A. L. Sukhachev,M. V. Rautskii,L. A. Solovyov,T. A. Andryushchenko,I. A. Bondarev,S. N. Varnakov,N. V. Volkov

DOI: https://doi.org/10.1007/s10853-024-09755-6

IF: 4.5

2024-05-30

Journal of Materials Science

Abstract:Mn 5 Ge 3 is a ferromagnetic hexagonal crystal promising for spintronics and magnetocalorics. A systematic study and analysis of the magnetic properties of the Mn 5 Ge 3 thin film grown on Si(111) were performed. The magnetic anisotropy of the film is determined by the shape anisotropy and the easy magnetization axis aligned along the c axis of the crystal. The uniaxial anisotropy constant K u fully corresponds to that for a bulk single crystal, which indicates that c axis coincides with film normal. Mn 5 Ge 3 film demonstrates high saturation magnetization M S = 900 emu/cm 3 (900 kA/m) at T = 100 K and magnetocaloric effect Δ S = 3.16 ± 0.22 J kg −1 K −1 at 300 K and B = 1.5 T. Δ S is comparable to that for multicomponent or Gd rare earth films. Furthermore, a different anisotropy of the magnetocaloric effect compared to bulk Mn 5 Ge 3 was found, which may be related to the anisotropy of the film shape and, possibly, to the domain structure. The results obtained are promising for the design and development of magnetocaloric, spintronic, and spin-caloritronic devices on a silicon platform.

materials science, multidisciplinary
Altermagnetic variants in thin films of Mn5Si3

Javier Rial,Miina Leiviskä,Gregor Skobjin,Antonín Bad'ura,Gilles Gaudin,Florian Disdier,Richard Schlitz,Ismaïla Kounta,Sebastian Beckert,Dominik Kriegner,Andy Thomas,Eva Schmoranzerová,Libor Šmejkal,Jairo Sinova,Tomáš Jungwirth,Lisa Michez,Helena Reichlová,Sebastian T. B. Goennenwein,Olena Gomonay,Vincent Baltz

2024-09-27

Abstract:The altermagnet candidate Mn5Si3 has attracted wide attention in the context of non-relativistic spin physics, due to its composition of light elements. However, the presumed structure of the altermagnetic phase had yet to be demonstrated. In this study, we demonstrate a hallmark of altermagnetism in Mn5Si3 thin films, namely the three options, or variants, for the checkerboard distribution of the magnetic Mn atoms. The magnetic symmetries were altered by field-rotation of the Néel vector along relevant crystal directions, resulting in anomalous Hall effect anisotropy. The experimental results in nanoscale devices were corroborated by a theoretical model involving atomic site dependent anisotropy and bulk Dzyaloshinskii-Moriya interaction for a single variant.

Mesoscale and Nanoscale Physics,Materials Science
Electronic structure and magnetic properties of δ-MnGa

Zongxian Yang,Jun Li,Ding-sheng Wang,Kaiming Zhang,Xide Xie

DOI: https://doi.org/10.1016/S0304-8853(97)01029-9

IF: 3.097

1998-01-01

Journal of Magnetism and Magnetic Materials

Abstract:The electronic structure and magnetic properties of δ-MnGa are studied by using the self-consistent linearized augmented plane-wave (LAPW) method. The analyses from the band structure, the density of states, total energy and the magnetic moments show that the ground states of the unstrained and strained δ-MnGa are in ferromagnetic phases, and the magnetic structures are affected significantly by strain.
Structure-dependent high- TC ferromagnetism in Mn-doped GeSe

Deren Li,Xi Zhang,Wenjie He,Li Lei,Yong Peng,Gang Xiang

DOI: https://doi.org/10.1039/d2nr02955c

IF: 6.7

2022-09-22

Nanoscale

Abstract:Layered IV-VI diluted magnetic semiconductors (DMSs) have exhibited fascinating ferromagnetism down to atomic layers, but their relatively low Curie temperature (TC, ≤200 K) significantly hinders their practical application. In this work, Mn-doped GeSe (GeMnSe) DMSs with high-TC ferromagnetism (FM) are synthesized by chemical vapor deposition. As the Mn concentration varies, the obtained samples exhibit various structures including single-crystalline nanocombs (SC-NCs), polycrystalline nanoparticles (PC-NPs) and amorphous nanoaggregates (a-NAs). All the samples exhibit FM, and their TC and saturation magnetization (MS) are correlated to their structures. Notably, GeMnSe SC-NCs show a record high TC of 309 K and a record strong magnetic moment of 4.37μB/Mn compared to all the previously-reported IV-VI DMSs. Further analysis shows that the FM originates from the synergetic effect of the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction, the crystalline order and the shape anisotropy in the samples. Our results provide a panorama of nanostructure-dependent FM in GeSe-based DMSs and suggest a peculiar playground for investigating fundamental physics and spintronic applications in IV-VI compounds.
Covalency, Correlations, and Interlayer Interactions Governing the Magnetic and Electronic Structure of Mn3Si2Te6

Chiara Bigi,Lei Qiao,Chao Liu,Paolo Barone,Monica Ciomaga Hatnean,Gesa-R. Siemann,Barat Achinuq,Daniel Alexander Mayoh,Giovanni Vinai,Vincent Polewczyk,Deepak Dagur,Federico Mazzola,Peter Bencok,Thorsten Hesjedal,Gerrit van der Laan,Wei Ren,Geetha Balakrishnan,Silvia Picozzi,Phil D. C. King

DOI: https://doi.org/10.1103/physrevb.108.054419

IF: 3.7

2023-01-01

Physical Review B

Abstract:Mn3Si2Te6 is a rare example of a layered ferrimagnet. It has recently been shown to host a colossal angular magnetoresistance as the spin orientation is rotated from the in- to out-of-plane direction, proposed to be underpinned by a topological nodal-line degeneracy in its electronic structure. Nonetheless, the origins of its ferrimagnetic structure remain controversial, while its experimental electronic structure, and the role of correlations in shaping this, are little explored to date. Here, we combine x-ray and photoemission-based spectroscopies with first-principles calculations to probe the elemental-selective electronic structure and magnetic order in Mn3Si2Te6. Through these, we identify a marked Mn-Te hybridization, which weakens the electronic correlations and enhances the magnetic anisotropy. We demonstrate how this strengthens the magnetic frustration in Mn3Si2Te6, which is key to stabilizing its ferrimagnetic order, and find a crucial role of both exchange interactions extending beyond nearest-neighbors and antisymmetric exchange in dictating its ordering temperature. Together, our results demonstrate a powerful methodology of using experimental electronic structure probes to constrain the parameter space for first-principles calculations of magnetic materials, and through this approach, reveal a pivotal role played by covalency in stabilizing the ferrimagnetic order in Mn3Si2Te6.
Critical Behavior and Magnetocaloric Effect in Quasi-Two-dimensional Mn3Si2Se6

Jiajun Ma,Yuwei Zhang,Xiaohui Yang,Tao Wang,Yazhou Li,Zhefeng Lou,Jiaxing Liao,Dexi Shao,Yuke Li,Xiao Lin,Jialu Wang

DOI: https://doi.org/10.1016/j.jallcom.2024.175004

IF: 6.2

2024-01-01

Journal of Alloys and Compounds

Abstract:The ferrimagnetic nodal-line semiconductor Mn 3 Si 2 Te 6 , featuring a quasi-two-dimensional crystal structure, has attracted significant attention owing to its rich physical properties. Here, we systematically investigate the magnetic properties of its isostructural compound, Mn 3 Si 2 Se 6 . The magnetism of this material is attributed to the Mn atoms, which exhibit antiferromagnetic interactions among the Mn atoms. The competition between antiferromagnetic exchange interactions results in an overall ferrimagnetic state, with a second-order transition from paramagnetic to ferrimagnetic occurring at 68 K. Critical exponents are derived using various common experimental techniques, including the modified Arrott plot, Kouvel-Fisher method, and critical isotherm analysis. The results indicate that the magnetism of Mn 3 Si 2 Se 6 closely aligns with the mean-field model, with critical exponents beta, gamma, and delta determined as 0.475(3), 1.059(3), and 3.20(1), respectively, at the critical temperature of 68.3 (2) K. Moreover, the curves of the magnetic entropy change - Delta S M ( T , H ) exhibit a peak around T c , with - Delta S max M amounts to 4.61 (3.63) J kg -1 K -1 for H // ab (// c ) with a field change of 7 T. The estimated magnetic entropy value near T c through specific heat is remarkably saller than the expected spin entropy of Mn 2+ ions, indicating the presence of short-range interactions in the paramagnetic region.
Anapole, chiral and orbital states in Mn3Si2Te6

Stephen W. Lovesey

DOI: https://doi.org/10.1103/PhysRevB.107.224410

2023-03-21

Abstract:The ferrimagnet Mn3Si2Te6 attracts attention because of a recently discovered colossal magnetoresistance (CMR) with unique magnetic field properties. An improved magnetic structure for the material has emerged from a neutron diffraction study linked to understanding the CMR. A deeper theoretical investigation of the magnetic structure has now revealed anapole, chiral and orbital states of manganese ions not previously mentioned. Moreover, it is shown that existence of these states in the low temperature form of Mn3Si2Te6, with a magnetic field applied, can be tested by neutron and resonant x-ray diffraction.

Strongly Correlated Electrons
Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$

Chiara Bigi,Lei Qiao,Chao Liu,Paolo Barone,Monica Ciomaga Hatnean,Gesa-R. Siemann,Barat Achinuq,Daniel Alexander Mayoh,Giovanni Vinai,Vincent Polewczyk,Deepak Dagur,Federico Mazzola,Peter Bencok,Thorsten Hesjedal,Gerrit van der Laan,Wei Ren,Geetha Balakrishnan,Silvia Picozzi,Phil D. C. King

DOI: https://doi.org/10.1103/PhysRevB.108.054419

2023-03-01

Abstract:Mn$_3$Si$_2$Te$_6$ is a rare example of a layered ferrimagnet. It has recently been shown to host a colossal angular magnetoresistance as the spin orientation is rotated from the in- to out-of-plane direction, proposed to be underpinned by a topological nodal-line degeneracy in its electronic structure. Nonetheless, the origins of its ferrimagnetic structure remain controversial, while its experimental electronic structure, and the role of correlations in shaping this, are little explored to date. Here, we combine x-ray and photoemission-based spectroscopies with first-principles calculations, to probe the elemental-selective electronic structure and magnetic order in Mn$_3$Si$_2$Te$_6$. Through these, we identify a marked Mn-Te hybridisation, which weakens the electronic correlations and enhances the magnetic anisotropy. We demonstrate how this strengthens the magnetic frustration in Mn$_3$Si$_2$Te$_6$, which is key to stabilising its ferrimagnetic order, and find a crucial role of both exchange interactions extending beyond nearest-neighbours and anti-symmetric exchange in dictating its ordering temperature. Together, our results demonstrate a powerful methodology of using experimental electronic structure probes to constrain the parameter space for first-principles calculations of magnetic materials, and through this approach, reveal a pivotal role played by covalency in stabilising the ferrimagnetic order in Mn$_3$Si$_2$Te$_6$.

Materials Science
Stoichiometry‐Induced Ferromagnetism in Altermagnetic Candidate MnTe

Michael Chilcote,Alessandro R. Mazza,Qiangsheng Lu,Isaiah Gray,Qi Tian,Qinwen Deng,Duncan Moseley,An‐Hsi Chen,Jason Lapano,Jason S. Gardner,Gyula Eres,T. Zac Ward,Erxi Feng,Huibo Cao,Valeria Lauter,Michael A. McGuire,Raphael Hermann,David Parker,Myung‐Geun Han,Asghar Kayani,Gaurab Rimal,Liang Wu,Timothy R. Charlton,Robert G. Moore,Matthew Brahlek

DOI: https://doi.org/10.1002/adfm.202405829

IF: 19

2024-06-09

Advanced Functional Materials

Abstract:Seeking to understand recent predictions of the exotic state known as "altermagnetism". The study reports that even when high‐quality samples are grown by molecular beam epitaxy, altermagnetic candidates may exhibit richer phenomena than anticipated, which highlights new routes to take advantage of these novel magnetic materials for new applications. The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ≈ 310 K) and semiconducting properties. The results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films are presented. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle‐resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first‐principles calculations for altermagnetic spin‐splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn‐richness that is intrinsic to the MBE‐grown samples. When combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Magnetic Moments of Mn in Amorphous Si and Ge: Theory and Experiment

Magnetism in Mn Nanowires and Clusters as δ-doped Layers in Group IV Semiconductors (Si, Ge)

Magnetic molecular orbitals in MnSi

Magnetism of Amorphous Ge1−xMnx Magnetic Semiconductor Films

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si

Anomalous Magnetic Behavior Of Mn-Mn Dimers In The Dilute Magnetic Semiconductor (Ga,Mn)N

Complex magnetic structure and spin waves of the noncollinear antiferromagnet Mn5Si3

Magnetic Mn-Doped Ge Nanostructures

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (0 0 1) substrates

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substrates

The Role of Correlations in the Magnetic Moment of MnSi

Structure, magnetic and magnetocaloric properties of the Mn5Ge3 thin film grown on Si(111)

Altermagnetic variants in thin films of Mn5Si3

Electronic structure and magnetic properties of δ-MnGa

Structure-dependent high- TC ferromagnetism in Mn-doped GeSe

Covalency, Correlations, and Interlayer Interactions Governing the Magnetic and Electronic Structure of Mn3Si2Te6

Critical Behavior and Magnetocaloric Effect in Quasi-Two-dimensional Mn3Si2Se6

Anapole, chiral and orbital states in Mn3Si2Te6

Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$

Stoichiometry‐Induced Ferromagnetism in Altermagnetic Candidate MnTe