Influence of Mo Doping on Interfacial Charge Carrier Dynamics in Photoelectrochemical Water Oxidation on BiVO4

Xiaofeng Wu,Freddy E. Oropeza,Zheng Qi,Marcus Einert,Chuanmu Tian,Clement Maheu,Kangle Lv,Jan P. Hofmann
DOI: https://doi.org/10.1039/d3se00061c
IF: 6.813
2023-01-01
Sustainable Energy & Fuels
Abstract:Intensity of photocurrent during water oxidation in BiVO4 is predominantly limited by charge transfer resistance (Rct), rather than semiconductor bulk resistance (Rbulk). Mo doping of BiVO4 can slightly reduce Rbulk but obviously decreases Rct.
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