Electron polarons in the subsurface layer of Mo/W-doped BiVO4 surfaces

Cen Jianhang,Li Shunning,Zheng Jiaxin,Pan Feng
DOI: https://doi.org/10.1039/c8ra09009b
IF: 4.036
2019-01-01
RSC Advances
Abstract:Monoclinic BiVO4 has been regarded as a promising photocatalyst for water splitting in recent years. In this research, the effects of Mo/W dopants near the surfaces of BiVO4 on electron transport are investigated using first-principles calculations. We demonstrate that the additional electron introduced by Mo/W either in the bulk or near the surfaces forms a self-trapped small polaron. The polaron prefers to be localized on the transition metal ions in the subsurface layer when Mo/W is doped in the vicinity of the surfaces. The localized positions of polarons can be rationalized by the d-orbital energy levels of the transition metals and the variation of electrostatic potential. The concentrated electron polarons in the subsurface layer of BiVO4 surfaces can build fast lanes for electron migration and mitigate the electron-hole recombination process, which underlines the importance of dopants near the surfaces as compared with those in the bulk.
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