Abstract:Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials that can generate spins with polarization perpendicular to the surfaces are needed. Several monolayer transition metal dichalcogenides (TMDs) have been predicted to generate such out of plane spins due to their 2D nature and unique band structures. Interestingly, opposite spins are locked to their respective sub-band in each K valley of the TMD valence band with substantially large energy splitting, which enables polarized spins to be accessible through electrical gating and spatially separated by electric field through the valley Hall effect (VHE). Therefore, spatial separation and accumulation of spins in these 2D TMDs are uniquely referred to as coupled valley and spin Hall effect. Here, we report an experiment of electrical generation of spin current with out of plane polarization in monolayer WSe2 and detection of spin signals through a nonlocal spin valve structure built on a lateral graphene spin diffusion channel that partially overlaps with WSe2.

Magnetic Field Effects and Excitonic Selection Rules in Monolayer Palladium Diselenide As a Large-Gap Quantum Spin Hall Insulator

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Promoting $p$-based Hall effects by $p$-$d$-$f$ hybridization in Gd-based dichalcogenides

Quantum octets in high mobility pentagonal two-dimensional PdSe 2

Quantum spin Hall effect in antiferromagnetic topological heterobilayers

Selective Substrate-Orbital-Filtering Effect to Realize the Large-Gap Quantum Spin Hall Effect

Giant Topological Hall Effect in Magnetic Weyl Metal Mn$_{2}$Pd$_{0.5}$Ir$_{0.5}$Sn

Non-Dirac Chern Insulators with Large Band Gaps and Spin-Polarized Edge States

Quantum spin Hall effect in Ta 2 M 3 Te 5 ( M = Pd , Ni )

Unexpected Giant-Gap Quantum Spin Hall Insulator in Chemically Decorated Plumbene Monolayer

Energy gap of topological surface states in proximity to a magnetic insulator

Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Quantum Octets in Air Stable High Mobility Two-Dimensional PdSe2

Chiral topological metals with multiple types of quasiparticle fermions and large spin Hall effect in the SrGePt family materials

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Strain-tunable quantum anomalous Hall effect/quantum anomalous valley Hall effect in two-dimensional ferromagnetic non-Dirac topological half-metal N2Pd4S6

Giant Optical Anisotropy Induced by Magnetic Order in FePS3/WSe2 Heterostructures

Topological Quantum Weak Antilocalization Limit and Anomalous Hall Effect in Semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey Heterostructure

Point and complex defects in monolayer Pd Se 2 : Evolution of electronic structure and emergence of magnetism

Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin‐Gapless Semiconductors—A Perspective Review

Robust Tunable Large-Gap Quantum Spin Hall States in Monolayer Cu2S on Insulating Substrates