Abstract:Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH systems realized so far, the decisive bottleneck preventing applications is the small bulk energy gap of less than 30 meV, requiring cryogenic operation temperatures in order to suppress detrimental bulk contributions to the edge conductance. Room-temperature functionalities, however, require much larger gaps. Here we show how this can be achieved by making use of a new QSH paradigm based on substrate-supported atomic monolayers of a high-Z element. Experimentally, the material is synthesized as honeycomb lattice of bismuth atoms, forming "bismuthene", on top of the wide-gap substrate SiC(0001). Consistent with the theoretical expectations, the spectroscopic signatures in experiment display a huge gap of ~0.8 eV in bismuthene, as well as conductive edge states. The analysis of the layer-substrate orbitals arrives at a QSH phase, whose topological gap - as a hallmark mechanism - is driven directly by the atomic spin-orbit coupling (SOC). Our results demonstrate how strained artificial lattices of heavy atoms, in contact with an insulating substrate, can be utilized to evoke a novel topological wide-gap scenario, where the chemical potential is located well within the global system gap, ensuring pure edge state conductance. We anticipate future experiments on topological signatures, such as transport measurements that probe the QSH effect via quantized universal conductance, notably at room temperature.

Selective Substrate-Orbital-Filtering Effect to Realize the Large-Gap Quantum Spin Hall Effect

Unexpected Giant-Gap Quantum Spin Hall Insulator in Chemically Decorated Plumbene Monolayer

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Epitaxial Growth of Ultraflat Bismuthene with Large Topological Band Inversion Enabled by Substrate-Orbital-Filtering Effect

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

Magnetic Field Effects and Excitonic Selection Rules in Monolayer Palladium Diselenide As a Large-Gap Quantum Spin Hall Insulator

Large-gap Quantum Spin Hall State on a Semiconductor Surface: the Orbital Filtering by Substrate

Room Temperature Quantum Spin Hall Insulator: Functionalized Stanene on Layered PbI2 Substrate

Fully spin-polarized quadratic non-Dirac bands realized quantum anomalous Hall effect

Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm

Non-Dirac Chern Insulators with Large Band Gaps and Spin-Polarized Edge States

Robust Large Gap Quantum Spin Hall Insulators in Methyl-functionalized III-Bi Buckled Honeycombs

Spin-Orbit Coupling Electronic Structures of Organic-Group Functionalized Sb and Bi Topological Monolayers

Intrinsic Quantum Spin Hall and Anomalous Hall Effects in H-Sb/bi Epitaxial Growth on a Ferromagnetic MnO2 Thin Film.

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Transport Properties Related to Two-Dimensional Surface States in Gate-Tunable Bi0.1Pb0.9Te Thin Films

Quantum Anomalous Hall Effect In Stanene On A Nonmagnetic Substrate

Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

Predicting quantum spin hall effect in graphene/GaSb and normal strain-controlled band structures

Formation of a quantum spin Hall state on a Ge(111) surface

Large-gap Quantum Anomalous Hall States Induced by Functionalizing Buckled Bi-III Monolayer/al$_{2}$o$_{3}$