Abstract:Tunnel FET (TFET) has attracted much attention as one of promising candidates of MOSFET for low power applications due to its capability of sub-60mV/dec subthreshold slope (SS) at room temperature [1]. It has a gated p-i-n structure switched by band-to-band tunneling (BTBT) mechanism. However, it is difficult to form abrupt source doping profile in the experiments for sharp band bending at the junction, resulting in relatively large SS of experimental demonstrations compared with ideally theoretical expectations. Another critical issue is that the on current (ION) is relatively low, especially for silicon-based TFET. The resulting issues of low ION, including large intrinsic delay and low gain, may also limit its applications. In recent years, most of TFET researchers focused on the methods for SS reduction and the I ON enhancement, including adoption of the small-bandgap materials, heterojunction [2], nanowire structure [3] and advanced annealing technology [4], etc. Mechanism engineering is focused in our research work as a different possible way to solve the TFET issues, not only improving I ON and SS values, but also enhancing comprehensive properties in terms of reduced Miller capacitance [5], immune to the super-linear onset of output characteristics [6] and reduced noise [7], etc.

Combined Experimental and Theoretical Investigation on SONOS Pflash Switch

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Investigation and three implementations for low power self-aligned 1.5-T SONOS flash device

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Investigation and Process Optimization of Sonos Cell'S Drain Disturb in 2-Transistor Structure Flash Arrays

Experimental Study of Semiconductor Opening Switch Device

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

A Novel Flash Memory Using Band-to-Band Tunneling In duced Hot Electron Injection to Program

full papers 2910 Resistive switching Resistive Switching in Nanogap Systems on SiO 2 Substrates

Structure and function research on FLASH memory

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

Steep Switch with Hybrid Operation Mechanism for Performance Improvement (Invited)

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

A novel flash memory cell and design optimization for high density and low power application

Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device

Investigation on the mechanism and a universal structural design method for Resistive Switching devices

Investigation of Edge- and Bulk-Related Resistive Switching Behaviors and Backward-Scan Effects in SiOx-based Resistive Switching Memory

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

A Novel Dual-Doping Floating-Gate (ddfg) Flash Memory Featuring Low Power and High Reliability Application

Research on Flashover Characteristics and the Physical Mechanism of High-Gain Gaas Photoconductive Switches