Room Temperature Upconversion Photoluminescence in Eras:Gaas Via Defect-Assisted Energy Transfer

Yuanbo Cheng,Kedong Zhang,Zongyan Zuo,Jinshan Yao,Yang Lu,Chen Li,Yu Deng,Xuejin Zhang,Hong Lu,Yanfeng Chen

DOI: https://doi.org/10.2139/ssrn.4282754

2022-01-01

SSRN Electronic Journal

Abstract:The understanding and tailoring of carrier relaxation behavior have been critical factors in the development of semiconductor devices. Here, we report the photoluminescence (PL) properties of rare earth element erbium doped GaAs (ErAs:GaAs) thin films grown by molecular beam epitaxy. Self-assembled ErAs nanoparticles with different volume fractions were formed within the GaAs matrix. Multiple Er-related PL peaks at 382 nm, 409 nm, 488 nm, 549 nm, 659 nm, 800 nm, 855 nm, 980 nm and 1535 nm were identified at room temperature, respectively. These PL peaks were assigned to the intra-4f-shell transition of the Er3+ ions. In conjunction with theoretical analysis, we propose an upconversion PL mechanism via defect-assisted energy transfer. The defect states introduced by the ErAs nanoparticles provide the path for energy transfer between the GaAs matrix and Er3+ ions, then the subsequential upconversion processoccurs to facilitate the following luminescence. The double logarithmic dependence of PL intensity on pump power reveals that the upconversion is a single photonic process. The capability of bandgap regulation by ErAs nanoparticles offers a promising route to achieve novel GaAs-based optoelectronic devices covering a broader wavelength range.