Abstract:In this paper, experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages are carried out for the double-trench SiC metal–oxide–semiconductor field-effect transistors, and the physical mechanism of the single event effect is analyzed. The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation. When the bias voltage is 400 V during irradiation, the device has a single event burned at a fluence of 9×10 4 ion/cm 2 , and when the bias voltage is 500 V, the device has a single event burned at a fluence of 3×10 4 ion/cm 2 , so when the LET value is 37.3 MeV·cm 2 /mg, the SEB threshold of DUT does not exceed 400 V, which is lower than 34 % of the rated operational voltage. The post gate-characteristics test results show that the leakage current of the device with a bias voltage of 100 V does not change significantly during irradiation. When the bias voltage is 200 V, the gate leakage and the drain leakage of the device both increase, so do they when the bias voltage is 300 V, which is positively related to bias voltage. In order to further analyze the single particle effect mechanism of device, the simulation is conducted by using TCAD tool. The simulation results show that at low bias voltage, the heavy ion incident device generates electron-hole pairs, the electrons are quickly swept out, and the holes accumulate at the gate oxygen corner under the effect of the electric field, which combines the source-drain bias voltage, leading to the formation of leakage current channels in the gate oxygen layer. The simulation results also show that at high bias voltage, the electrons generated by the incident heavy ion move towards the junction of the N – drift layer and the N + substrate under the effect of the electric field, which further increases the electric field strength and causes significant impact ionization. The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide, causing single event burnout. This work provides a reference and support for studying the radiation effect mechanism and putting silicon carbide power devices into aerospace applications.

The Influence of 10 MeV Proton Irradiation on Silicon Carbide Power Metal-Oxide-Semiconductor Field-Effect Transistor

Impact of Heavy-Ion Irradiation on Gate Oxide Reliability of Silicon Carbide Power MOSFET

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs

Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs

Investigations on proton-irradiation-induced spacer damage in deep-submicron MOSFETs

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

Total Ionizing Dose Effects of 60co Γ-Ray Radiation on Split-Gate SiC MOSFETs

Total ionizing dose effects of Co-60-& gamma; ray radiation on SiC MOSFETs with different gate oxide thickness

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates

Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions

Heavy ion single event effect in double-trench SiC metal–oxide–semiconductor field-effect transistors

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Statistical Analysis on the Effects of Heavy Ion Irradiation on 65 Nm Bulk Silicon MOS Devices

Effect of Protons Located at Different Region in SiO2 Layer on GLPNP Transistors Degradation